Wide/Ultrawide Bandgap
Semiconductors Laboratory
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Electrical &
Computer Engineering
Texas Tech University

Facility

State-of-the-art crystal-growth, deposition, and characterization systems for wide- and ultrawide-bandgap semiconductor research.

Our laboratory is equipped for the full research workflow — from epitaxial growth of III-nitrides and gallium oxide, to diamond synthesis, to complete optical and electrical characterization of materials and devices.

Molecular Beam Epitaxy (MBE)

VEECO GEN 10 MBE system

VEECO GEN 10 MBE

For III-Nitride Semiconductors

VEECO GENxplor MBE system

VEECO GENXPLOR

For Gallium Oxide & Related Materials

Chemical Vapor Deposition (CVD)

Thomas Swan MOCVD system

Thomas Swan MOCVD

Metal-Organic CVD for III-Nitride Semiconductors

Diamond Technologies MPCVD system for diamond synthesis

Two MPCVD Systems

Microwave Plasma CVD for Diamond Study

Optical & Electrical Characterization

Horiba microspectroscopy system with MicroPL and Raman

Horiba Microspectroscopy System

MicroPL / Raman

Keithley 4200 semiconductor parameter analyzer

Keithley 4200

Semiconductor Parameter Analyzer

Deep Level Transient Spectroscopy (DLTS) system DLTS cryostat interior with probe contacts on wafer

Deep Level Transient Spectroscopy

DLTS for Defect & Trap-State Analysis

Additional Instruments

  • Keithley 2401 Source Meter
  • Thorlabs Optical Power Meter
  • StellarNet UV-VIS Spectrometer with Power Meter & Integrating Sphere