Wide/Ultrawide Bandgap
Semiconductors Laboratory
Texas Tech University Logo
Electrical &
Computer Engineering
Texas Tech University

NSF REU Site

Wide/Ultrawide Bandgap Semiconductor Technologies and Applications (WUBSTA) — a National Science Foundation Research Experiences for Undergraduates program at Texas Tech University.

NSF REU Site in Wide/Ultrawide Bandgap Semiconductor Technologies and Applications (WUBSTA): program leadership and the 2026 student cohort with home institutions

The NSF REU Site in Wide/Ultrawide Bandgap Semiconductor Technologies and Applications (WUBSTA) hosts undergraduate researchers each summer at Texas Tech University. Students work alongside faculty and graduate mentors on wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors and their applications in power electronics, RF, optoelectronics, and sensing — gaining hands-on experience, building research skills, and joining a supportive community that prepares them for graduate school and STEM careers.

Program at a Glance

10
Undergraduates each summer
$7,000
Summer stipend
Housing
Fully supported
$600
Travel support

Program Leadership

Prof. Hieu P. Nguyen

Program Director

Prof. Tim Dallas

Program Co-Director

Dr. Heather Greenhalgh-Spencer

Program Evaluator

Faculty Mentors

  • Prof. Stephen Bayne
  • Prof. Ravi Joshi
  • Prof. Ayrton Bernussi
  • Prof. Argenis Bilbao
  • Prof. Taewoo Kim
  • Prof. Joe Gauthier

Research Focus Areas

Focus Area 1

WBG/UWBG for Nanophotonics

Nanowire light-emitting devices, color tuning for micro-displays, and atomistic understanding of UWBG (h-BN) growth.

Focus Area 2

RF & High-Power Nanoelectronics

Electro-thermal management, WBG power device packaging, and reliability of AlGaN/GaN HEMTs in extreme high-temperature environments.

Focus Area 3

Oxides for Detectors & Memory

High-quality Ga₂O₃ and (Al,Ga)₂O₃ materials and low-power, multi-level Ga₂O₃ resistive memory (RRAM) devices.

What You Will Gain

2026 Cohort

REU Student Publications

October 2026 · Diamond & Related Materials

“Graphite-assisted allotrope mixed high-pressure sintering for superior polycrystalline diamond properties”

2026 cohort member Allen Zi Lin He (Vanderbilt University) published his first article, introducing the Allotrope Mixed High-Pressure (AMHP) method: fine graphite fills the gaps between diamond particles and transforms into diamond during high-pressure, high-temperature sintering, improving densification and interparticle bonding.

Authors: A. Z. L. He, H. P. T. Nguyen, et al.

Interested in Applying?

Undergraduate students interested in a summer research experience in wide- and ultrawide-bandgap semiconductors are encouraged to reach out to the program director.

hieu.p.nguyen@ttu.edu

Funded by the National Science Foundation (REU Program).