News & Updates

Texas Tech Receives $19 Million Grant to Further Semiconductor Innovation

The Edward E. Whitacre Jr. College of Engineering received an additional award of more than $19 million from the Texas Semiconductor Innovation Fund (TSIF) to build a next-generation computing cluster in Lubbock powered by the newest generation of Nvidia chips. The project pairs AI with high-fidelity simulation data and experimental results to shorten development cycles for next-generation semiconductor materials and devices.

Planned research includes AI-driven materials discovery and modeling, AI-enabled epitaxial growth of ultrawide-bandgap semiconductors, and advanced semiconductor devices for higher performance and efficiency, while giving undergraduate and graduate students interdisciplinary training for the semiconductor workforce. The team includes Dean Roland Faller, Profs. Joseph Gauthier, Hongxing Jiang, Ravindra Joshi, Taewoo Kim, Changzhi Li, Jingyu Lin, and our PI, Prof. Hieu P. Nguyen.

Undergraduate Researcher Zackary Woodel Wins First Place in 2026 Pantex Innovation Challenge

Zackary Woodel, a sophomore undergraduate researcher in our lab and a participant in the Department of Defense Workforce Development Program, won first place in the 2026 Pantex Innovation Challenge for an innovative national security solution. Competing as team Diamond Deterrence, he earned a $5,000 award and advanced to the final round on November 6, where he will compete against leading universities across Texas. Congratulations, Zackary!

NSF REU Student Allen He Publishes First Paper on Graphite-Assisted Diamond Sintering

“Graphite-assisted allotrope mixed high-pressure sintering for superior polycrystalline diamond properties” Diamond & Related Materials (2026)

Allen Zi Lin He (Vanderbilt University), a member of our 2026 WUBSTA NSF REU cohort, has published his first journal article. The work introduces the Allotrope Mixed High-Pressure (AMHP) method, in which fine graphite fills the gaps between diamond particles and converts to diamond during high-pressure, high-temperature sintering. This improves densification and interparticle bonding, with graphite acting as an “interface-bonding homogeneous-transformation agent.” Congratulations, Allen!

Authors: A. Z. L. He, H. P. T. Nguyen, et al.

Review on III-Nitride Nanowire Gas Sensors Published in ACS Sensors

“III-Nitride nanowire-based gas sensors: From material design to low-temperature sensing performance” ACS Sensors, Review, Open Access, Article ASAP (2026)

Our group published an open-access review of gas sensors built from III-nitride nanowires. It traces the field from how the nanowire materials are designed to how well the sensors perform at low operating temperatures.

Authors: R. Maddaka, S. Velpula, J. Hutcheson, H. P. T. Nguyen

Review on InGaN Micro-LED Technology Published in Applied Physics Reviews

“InGaN micro-LED technology: Recent progress in planar and nanowire architectures, fabrication challenges, and emerging surface passivation approaches” Applied Physics Reviews, Vol. 13, Issue 3, 031341

Our group published a comprehensive review of InGaN micro-LEDs. It covers recent progress in both planar and nanowire device designs, the main fabrication challenges as pixels shrink, and new surface passivation methods that help recover efficiency in small micro-LEDs.

Authors: M. Reddeppa, M. B. S. Muthu, I. H. Emu, S. Bayne, A. Bernussi, H. P. T. Nguyen

New High-κ Gate Stack for GaN MOS Devices

“High-κ Nb₂O₅ gate dielectric with Al₂O₃ interfacial passivation and Pt/PtO_x gate for GaN-based MOS devices” Materials Science in Semiconductor Processing, Vol. 216, Art. 111060

This work studies Nb₂O₅ as a high-κ gate dielectric for GaN, using a thin Al₂O₃ layer to passivate the interface and a Pt/PtO_x gate. The goal is better gate control and lower leakage for GaN-based power and RF transistors.

Authors: N. Manikanthababu, K. Prajna, H. P. T. Nguyen

Tunable Ultra-Wide-Bandgap (AlGa)₂O₃ Multilayers Reported

“Compositionally tunable (Al_xGa_1−x)₂O₃ ultra-wide-bandgap multilayers” Materials Science in Semiconductor Processing, Vol. 210, Art. 110706

The team reports (Al_xGa_1−x)₂O₃ multilayers whose composition, and therefore bandgap, can be tuned. These ultra-wide-bandgap oxides are promising for deep-UV optoelectronics and high-power electronics.

Authors: Y.-C. Ho, C. Ormond, S. Mostufa, M. Gaddy, V. Kuryatkov, K. Wu, S. Bayne, H. P. T. Nguyen, A. A. Bernussi, et al.

Silver Nanoparticles Boost TiO₂ Thin-Film Photodetectors

“Performance enhancement of TiO₂-thin film photodetector via Ag nanoparticles for optical sensing applications” Microsystem Technologies, Vol. 32, Issue 10, Art. 141

This collaborative paper shows how adding Ag nanoparticles to a TiO₂ thin film improves photodetector performance, with applications in optical sensing.

Authors: L. P. Singh, R. Laishram, B. Shougaijam, H. P. T. Nguyen, T. R. Lenka

Triple-Material-Gate GaN HEMT Designed as a pH Biosensor

“Gate-engineered high-performance triple material gate AlGaN/GaN HEMT based biosensor for pH detection” Microsystem Technologies, Vol. 32, Issue 9, Art. 135

Researchers engineered the gate of an AlGaN/GaN high-electron-mobility transistor using three gate materials to build a high-performance sensor for pH detection.

Authors: E. Raghuveera, P. Kar, N. Kumar, T. R. Lenka, H. P. T. Nguyen

Gold Nanoparticles Enhance Chevron-Shaped TiO₂ UV Photodetector

“Au nanoparticle-induced plasmonic enhancement in a chevronic TiO₂ UV photodetector for optical sensing applications” Microsystem Technologies, Vol. 32, Issue 8, Art. 115

This study uses plasmonic Au nanoparticles to strengthen the UV response of a TiO₂ photodetector built with a chevron-shaped (chevronic) nanostructure, aimed at optical sensing applications.

Authors: P. Khundrakpam, A. Ranjan, B. Shougaijam, H. P. T. Nguyen, T. R. Lenka

Simulation Study Compares Pb, Sn and Ge Perovskite Solar Cells

“Comparative performance analysis of MAXI₃ and FAXI₃ perovskite solar cells varying X with Pb, Sn, and Ge using SCAPS-1D” Facta Universitatis, Series: Electronics and Energetics, Vol. 39, No. 3, pp. 533–544

Using SCAPS-1D device simulation, this paper compares the performance of MAXI₃ and FAXI₃ perovskite solar cells as the metal X is varied among lead, tin and germanium.

Authors: S. Shukla, T. R. Lenka, T. Rahman, I. H. Emu, H. P. T. Nguyen

Ferroelectric-Gated InSe 2D-HEMT Modeled for Biosensing

“Simulation modeling of ferroelectric-gated InSe 2D-HEMT with enhanced electrostatic control and 2DEG engineering towards biosensor applications” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 39, Issue 4, Art. e70186

This invited article models a two-dimensional InSe transistor with a ferroelectric gate, showing stronger electrostatic control and engineering of the two-dimensional electron gas (2DEG) for biosensor applications.

Authors: E. Raghuveera, P. Kar, N. Kumar, T. R. Lenka, S. Choudhary, H. P. T. Nguyen

Red Nanowire LEDs Show Thermal Stability for Extreme Environments

“Thermal stability of MBE-grown InGaN/AlGaN red nanowire LEDs for extreme environment applications” Optics Letters, Vol. 51, Issue 11, pp. 3233–3236

Our team examined the thermal stability of red InGaN/AlGaN nanowire LEDs grown by molecular beam epitaxy (MBE), targeting light sources that keep working in extreme environments.

Authors: M. B. S. Muthu, S. Velpula, R. T. Velpula, J. Bonaldo, J. Hutcheson, M. Debenedictis, H. P. T. Nguyen

Double-Gate GaN HEMT Study Presented at IEEE EDTM 2026

“Analysis of double gate AlGaN/GaN HEMT with increasing quantum wells for emerging electronics applications” 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Penang, Malaysia, Conference paper, March 1–4, 2026

Presented at the 2026 IEEE EDTM conference in Penang, Malaysia, this work analyzes how adding quantum wells affects a double-gate AlGaN/GaN HEMT for emerging electronics.

Authors: P. Kar, N. Kumar, N. J. Borah, T. R. Lenka, S. Choudhary, H. P. T. Nguyen

Transport Layer Design Explored for CsXI₃ Perovskite Solar Cells

“Design and analysis of CsXI₃ perovskite solar cells with varied hole and electron transport layers” Journal of Materials Science: Materials in Electronics, Vol. 37, Issue 12, Art. 894

This paper designs and analyzes CsXI₃ perovskite solar cells, comparing different hole and electron transport layers to improve device performance.

Authors: S. Shukla, T. R. Lenka, H. P. T. Nguyen, S. Choudhary

Perovskite Solar Cell Modeling for Energy Harvesting

“Design and simulation modelling of MAXI₃ and FAXI₃ perovskite solar cells with different electron transport layers and hole transport layers for energy harvesting” physica status solidi (a), Vol. 223, Issue 8, Art. e202500745

The authors simulate MAXI₃ and FAXI₃ perovskite solar cells with a range of electron and hole transport layers to identify promising combinations for energy harvesting.

Authors: S. Shukla, T. R. Lenka, T. Rahman, I. H. Emu, H. P. T. Nguyen, S. Choudhary

Highly Sensitive Broadband Photodetector Built on Ag-Decorated TiO₂

“Highly sensitive Ag nanoparticle deposited TiO₂ thin film-based broadband photodetector” IEEE Transactions on Electron Devices, Vol. 73, Issue 6, pp. 3660–3668

Depositing Ag nanoparticles on a TiO₂ thin film produces a highly sensitive photodetector that responds across a broad range of wavelengths.

Authors: L. P. Singh, R. Laishram, S. Bikesh, B. Chanam, T. R. Lenka, T. Rahman, et al.

New Barrier Designs Improve N-Polar AlGaN Deep-UV LEDs

“Polarization-engineered barrier designs and field reversal strategies for improved carrier confinement in N-polar thin-film aluminum gallium nitride deep-ultraviolet light-emitting diodes” physica status solidi (a), Vol. 223, Issue 7, Art. e202500995

This open-access paper proposes polarization-engineered barriers and field-reversal strategies that better confine carriers in N-polar thin-film AlGaN deep-ultraviolet LEDs.

Authors: S. Velpula, M. B. S. Muthu, R. T. Velpula, H. P. T. Nguyen

Dual-Barrier Gate Stack Studied for β-Ga₂O₃ MOS Capacitors

“Temperature-dependent conduction and dielectric engineering of dual-barrier Pt/PtO_x/Nb₂O₅/SiO₂/β-Ga₂O₃ MOS capacitors” IEEE Transactions on Electron Devices, Vol. 73, Issue 5, pp. 2540–2545

This work examines how conduction changes with temperature in Pt/PtO_x/Nb₂O₅/SiO₂/β-Ga₂O₃ MOS capacitors and how the dual-barrier dielectric can be engineered for ultra-wide-bandgap devices.

Authors: N. Manikanthababu, K. Prajna, J. V. Vas, H. P. T. Nguyen

Phosphor-Free White Nanowire LEDs Built for Extreme Environments

“Highly stable phosphor-free InGaN/AlGaN nanowire white light emitting diodes for extreme environments” Materials Science in Semiconductor Processing, Vol. 202, Art. 110185

Our group reports highly stable phosphor-free white LEDs based on InGaN/AlGaN nanowires, designed to keep emitting reliably under extreme conditions, including operation up to 1000 °C.

Authors: M. B. S. Muthu, S. Velpula, R. T. Velpula, I. H. Emu, U. Ramirez, H. P. T. Nguyen

Thermal Stability Analysis of Multi-Quantum-Well GaN HEMTs

“Thermal stability analysis of AlGaN/GaN HEMT with multiple quantum wells for emerging nanoelectronics” Microsystem Technologies, Vol. 32, Issue 2, Art. 17

This paper analyzes the thermal stability of AlGaN/GaN HEMTs that include multiple quantum wells, aimed at emerging nanoelectronics.

Authors: P. Kar, N. Kumar, E. Raghuveera, T. R. Lenka, T. Rahman, I. H. Emu, H. P. T. Nguyen, S. Choudhary

Nanowire LEDs Operate at 1000 °C, Featured in ACS Photonics

“Extreme-temperature (1000 °C) operation of InGaN/AlGaN nanowire light-emitting diodes” ACS Photonics, Vol. 13, Issue 3, pp. 656–665

In an open-access ACS Photonics article, our team demonstrates InGaN/AlGaN nanowire LEDs that keep operating at temperatures as high as 1000 °C, opening the door to light sources for extreme environments.

Authors: M. B. S. Muthu, I. H. Emu, R. T. Velpula, H. P. T. Nguyen

Dr. Hieu P. Nguyen Promoted to Professor

Congratulations to our principal investigator, Dr. Hieu P. Nguyen, who is being promoted to Professor of Electrical and Computer Engineering at Texas Tech University, effective September 1, 2026.

NSF REU Site in Wide/Ultrawide Bandgap Semiconductors Launches at Texas Tech

Texas Tech received a National Science Foundation grant to establish a new Research Experiences for Undergraduates (REU) Site — Wide/Ultrawide Bandgap Semiconductor Technologies and Applications (WUBSTA) — which held its program kickoff on June 4, 2026. Directed by Prof. Hieu P. Nguyen with Co-Director Prof. Tim Dallas, the program hosts 10 undergraduate researchers at TTU each summer (June 1 – July 31) to work on WBG/UWBG materials and devices for power electronics, RF, optoelectronics, and sensing.

Faculty mentors include Profs. Stephen Bayne, Ravi Joshi, Ayrton Bernussi, Argenis Bilbao, Taewoo Kim, and Joe Gauthier. Participants receive a $7,000 stipend, full housing support, and travel support.

Welcoming Our 2026 NSF REU Cohort

We're delighted to welcome ten undergraduate researchers joining us for Summer 2026 through the WUBSTA REU Site:

• Victoria WalkeAngelo State University
• Korinne StrausbaughYale University
• Chase ChrenkaGeorgia Institute of Technology
• Saylor CorelisTexas Tech University
• Caleb Josue PolUniversidad del Sagrado Corazón
• Luis MarmolejoMidwestern State University
• Allen Zi Lin HeVanderbilt University
• Zach MoughamianUniversity of Missouri–St. Louis
• Finn McCoyTexas Tech University
• Abdurrahman SyedUniversity of Texas, Dallas

Texas Tech Receives $4.5 Million Grant to Advance Semiconductor Research

The Edward E. Whitacre Jr. College of Engineering received a $4.5 million Texas Semiconductor Innovation Fund (TSIF) grant to advance ultrawide-bandgap (UWBG) materials, high-power electronics, and semiconductor manufacturing capabilities — supporting industries such as aerospace and defense through more reliable UWBG materials and high-electron-mobility transistors (HEMTs).

Texas Tech to Build $24 Million Clean Room for Semiconductor Development

The Whitacre College of Engineering will build a multipurpose clean-room facility after receiving a $12 million Texas Semiconductor Innovation Fund (TSIF) award, matched by the university for a $24 million total. The project is led by Dean Roland Faller, Associate Dean Changzhi Li, and Dr. Hieu P. Nguyen, and will significantly expand the lab's fabrication capabilities.

Texas Tech Awarded $2 Million to Help Students Join the Semiconductor Workforce

The College of Engineering received a $2 million National Science Foundation (NSF) grant through the Scholarships in STEM (S-STEM) program to prepare students for careers in the semiconductor industry via scholarships, mentoring, and industry-focused training. The project is led by Prof. Tim Dallas.

Texas Tech to Earn $14M for Advanced Semiconductor Power Devices Program

The U.S. Department of Defense awarded Texas Tech a $14 million grant to lead an Advanced Semiconductor Power Devices Program focused on engineering reliable, high-performance ultrawide-bandgap (UWBG) devices for harsh environments and defense systems.

Texas Tech Researcher Aims to Strengthen Security with Semiconductor Light Sources

Dr. Hieu P. Nguyen earned a Department of Defense grant to develop high-efficiency, high-power semiconductor nanowire light sources and high-electron-mobility transistors built from UWBG materials capable of operating in extreme environments (up to ~1000°F), supporting defense applications that help keep troops safe.

Texas Tech Awarded $3.75 Million for 3D Heterogeneous Integration Program

A grant from the Defense Advanced Research Projects Agency (DARPA) and the State of Texas will launch a Master of Science in Electrical Engineering program specializing in 3D Heterogeneous Integration, combining technical education with hands-on experience to train future leaders in semiconductor innovation. Led by Prof. Tim Dallas.

Texas Tech to Develop Semiconductor Power Devices Through $6 Million Grant

A Department of Defense–funded project will enable the Whitacre College to acquire equipment, systems, and tools critical to enhancing the college's wide/ultrawide-bandgap semiconductor power device capabilities.

Texas Tech Secures $6.5 Million ARL Workforce Pilot

Texas Tech secured a $6.5 million Army Research Laboratory (ARL) workforce pilot program to train next-generation researchers in advanced materials and radar technology.