[B.5] H. P. T. Nguyen, and Stephen Bayne, “Wide/Ultrawide Bandgap Semiconductor Devices for Harsh Environments”, Elsevier (In Progress)
[B.1] T. R. Lenka, and H. P. T. Nguyen, “Nanoelectronics Technology and Applications”, Springer, 2026.
[B.2] T. R. Lenka, and H. P. T. Nguyen, “Nanoelectronics Devices and Applications,” Bentham, 2024.
[B.3] T. R. Lenka, and H. P. T. Nguyen, “HEMT Technology and Applications,” Springer, 2022.
[B.4] H. P. T. Nguyen, “Nanostructured Light-Emitters,” MDPI, Switzerland, 2020.
Book Chapters
[BC.11] R. Maddakka, S. Velpula, M. Muthu, and H. P. T. Nguyen, "IIINitride LEDs for Extreme Environments: Materials, Design, and Reliability", Wide/Ultrawide Bandgap Semiconductor Devices for Harsh Environments, Elsevier (Under Review)
[BC.10] M. Nethala, I. H. Emu, A. Bernussi, and H. P. T. Nguyen, "Defect Physics in β-Ga₂O₃ Devices: From Deep Levels to Reliability in Harsh Environments", Wide/Ultrawide Bandgap Semiconductor Devices for Harsh Environments, Elsevier (Under Review)
[BC.9] H.-D. Nguyen, M. B. S. Muthu, and H. P. T. Nguyen, "Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes", Nanoelectronics Devices and Applications, Benthem, 2024
[BC.8] R. Singh, T. R. Lenka, and H. P. T. Nguyen, "3D Simulation Study of Laterally Gated AlN/β-Ga₂O₃ HEMT Technology for RF and High-Power Nanoelectronics", HEMT Technology and Applications, Springer, 2022
[BC.7] J. Manta, G. P. Rao, T. R. Lenka, M. Choudhury, and H. P. T. Nguyen, "III-Nitride HEMTs for THz Applications", Terahertz Devices, Circuits and Systems, 2022
[BC.6] R. T. Velpula, B. Jain, S. Das, T. R. Lenka, and H. P. T. Nguyen, "Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron-Blocking Layer Free Approach", Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems, 2022
[BC.5] R. Singh, T. R. Lenka, H. P. T. Nguyen, "Evolution and Present State-of-Art Gallium Oxide HEMTs–The Key Takeaways", HEMT Technology and Applications, Springer, 2022
[BC.4] R. T. Velpula, B. Jain, D. Samadrita, T. R. Lenka, and H. P. T. Nguyen, "Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron Blocking Layer Free Approach", Micro and Nanoelectronics Devices, Circuits and Systems, Springer, 2022
[BC.3] R. Singh, T.R. Lenka, D. Panda, R.T. Velpula, B. Jain, H.O.T. Bui, and H.P.T. Nguyen, "RF Performance of Ultra-wide Bandgap HEMTs", Emerging Trends in Terahertz Solid State Physics and Devices, Springer, 2020
[BC.2] R. Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P.T. Nguyen, "Ga₂O₃ Based Heterostructure FETs (HFETs) for Microwave and Millimeter-Wave Applications", Emerging Trends in Terahertz Engineering and System Technologies, Springer, 2020
[BC.1] O. Wang, H. P. T. Nguyen, S. Zhao, and Z. Mi, "Axial GaN nanowire-based light emitting diodes." chapter in Wide band gap semiconductor nanowires for optical devices, edited by V. Consonni and G. Feuillet, Hermes Science Publishing, Published online on August 08, 2014
Patents
H. P. T. Nguyen, R. T. Velpula, and B. Jain, “Resistive Switching in a RRAM Device,” US Provisional Patent, Serial No. 63/410,293.
Z. Mi, S. Zhao, “Methods and devices for solid state nanowire devices,” US 2016/0027961 A1.
Z. Mi and K. Cui, “High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis,” US 2012/0205613.
Journal Papers
2026
[J.154] R. Maddaka, M. Muthu, I. Emu, A. Bernussi, S. Bayne, and H. P. T. Nguyen, “InGaN Micro-LED Technology: Recent Progress in Planar and Nanowire Architectures, Fabrication Challenges, and Emerging Surface Passivation Approaches,” Applied Physics Reviews (In Press).
[J.153] S. Velpula, M. Muthu, I. Emu, R. Velpula, T. Ena, H.-D. Nguyen, and H. P. T. Nguyen, “High-Temperature Reliability of AlGaN Deep-UV LEDs for Extreme Environments,” Applied Optics (In Press).
[J.152] N. Manikanthababu, K. Prajna, and H. P. T. Nguyen, “High-κ Nb₂O₅ Gate Dielectric with Al₂O₃ Interfacial Passivation and Pt/PtOₓ Gate for GaN-Based MOS Devices,” Materials Science in Semiconductor Processing, 216 (2026) 111060.
[J.151] L. Singh, R. Laishram, B. Shougaijam, H. P. T. Nguyen, and T. R. Lenka, “Performance Enhancement of TiO₂ Thin-Film Photodetector via Ag Nanoparticles for Optical Sensing Applications,” Microsystem Technologies, 32 (2026) 141.
[J.150] E. Raghuveera, P. Kar, N. Kumar, T. R. Lenka, and H. P. T. Nguyen, “Gate-Engineered High-Performance Triple-Material-Gate AlGaN/GaN HEMT-Based Biosensor for pH Detection,” Microsystem Technologies, 32 (2026) 135.
[J.149] M. B. S. Muthu, S. Velpula, R. T. Velpula, J. Bonaldo, J. Hutcheson, and H. P. T. Nguyen, “Thermal Stability of MBE-Grown InGaN/AlGaN Red Nanowire LEDs for Extreme Environment Applications,” Optics Letters, 51 (2026) 3233.
[J.148] P. Khundrakpam, B. Shougaijam, H. P. T. Nguyen, and T. R. Lenka, “Au Nanoparticle-Induced Plasmonic Enhancement in a Chevronic TiO₂ UV Photodetector for Optical Sensing Applications,” Microsystem Technologies, 32 (2026) 115.
[J.147] E. Raghuveera, P. Kar, N. Kumar, T. R. Lenka, and H. P. T. Nguyen, “Simulation Modeling of a Ferroelectric-Gated InSe 2D HEMT with Enhanced Electrostatic Control and 2DEG Engineering toward Biosensor Applications,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 39 (2026) e70186.
[J.146] S. Shukla, T. R. Lenka, T. Rahman, I. H. Emu, and H. P. T. Nguyen, “Comparative Performance Analysis of MAXI3 and FAXI3 Perovskite Solar Cells Varying X with Pb, Sn, and Ge Using SCAPS-1D,” Facta Universitatis, Series: Electronics and Energetics, 39 (2026) 533.
[J.145] S. Shukla, T. R. Lenka, I. H. Emu, H. P. T. Nguyen, and S. Choudhary, “Design and Simulation Modeling of MAXI₃ and FAXI₃ Perovskite Solar Cells,” Physica Status Solidi (a), 223 (2026) e202500745.
[J.144] Y.-C. Ho, C. Ormond, S. Mostufa, M. Gaddy, V. Kuryatkov, S. Bayne, H. P. T. Nguyen, and A. Bernussi, “Bandgap Engineering via Multilayer Deposition of (AlxGa1-x)2O3 Using Magnetron Sputtering Technique,” Materials Science in Semiconductor Processing, 210 (2026) 110706.
[J.143] N. Manikanthababu, K. Prajna, J. V. Vas, and H. P. T. Nguyen, “Temperature dependent conduction and Dielectric engineering of dual-barrier Pt/PtOx/Nb2O5/SiO2/β-Ga2O3 MOS Capacitors,” IEEE Transactions on Electron Devices, 73 (2026) 2540.
[J.142] L. P. Singh, B. Shougaijam, R. Laishram, T. R. Lenka, and H. P. T. Nguyen, “Highly Sensitive Ag Nanoparticle Assisted TiO2 Thin Film based Broadband Photodetector,” IEEE Transactions on Electron Devices, 73 (2026) 3360.
[J.141] S. Velpula, S. B. S. Muthu, R. Velpula, and H. P. T. Nguyen, “Polarization-Engineered Barrier and Field Reversal Structures for Improved Carrier Confinement in N-Polar Thin-Film AlGaN Deep-UV LEDs,” Physica Status Solidi (a) – Applications and Materials Science, 223 (2026) e202500995.
[J.140] M. B. S. Muthu, I. H. Emu, R. T. Velpula, and H. P. T. Nguyen, “Extreme-Temperature (1000 °C) Operation of InGaN/AlGaN Nanowire Light-Emitting Diodes,” ACS Photonics, 13 (2026) 656.
[J.139] P. Kar, N. Kumar, E. Raghuveera, T. R. Lenka, T. Rahman, I. H. Emu, H. P. T. Nguyen, and S. Choudhary, “Thermal Stability Analysis of AlGaN/GaN HEMT with Multiple Quantum Wells for Emerging Nanoelectronics,” Microsystem Technologies, 32 (2026) 17.
[J.138] M. B. S. Muthu, S. Velpula, I. H. Emu, R. T. Velpula, and H. P. T. Nguyen, “Highly Stable Phosphor-Free InGaN/AlGaN Nanowire White-Light-Emitting Diodes for Extreme Environments,” Materials Science in Semiconductor Processing, 202 (2026) 110185.
[J.137] T. R. Lenka, M. B. S. Muthu, T. Rahman, I. H. Emu, and H. P. T. Nguyen, “Resilient High-Temperature Effect on DC Characteristics of GaN-on-SiC HEMT up to 600 °C,” Microelectronics Journal, 168 (2026) 107019.
[J.136] G. P. Rao, B. Saritha, A. Lenka, T. R. Lenka, and H. P. T. Nguyen, “A Review on the Evolution and Outlook of E-Mode III-Nitride HEMTs: Comparative Insights into Architectures and Performance,” Micro and Nanostructures, 209 (2026) 208412.
2025
[J.135] T. Rahman, T. R. Lenka, M. B. S. Muthu, I. H. Emu, U. Ramirez, and H. P. T. Nguyen, “Lattice heat flow thermal modeling of recessed bridge-gate InAlGaN/GaN HEMT,” Microsystem Technologies, 31 (2025) 3461.
[J.134] M. B. S. Muthu, R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Superlattice Structure for High Performance AlGaN Deep Ultraviolet Light-Emitting Diodes,” Photonics, 12 (2025) 752.
[J.133] E. Raghuveera, T. R. Lenka, G. P. Rao, V. Vadalà, and H. P. T. Nguyen, “Development of a physics-based 2DEG analytical and simulation model of AlGaN/GaN HEMT biosensor for biomolecule detection—an algorithmic approach,” Microsystem Technologies, 31 (2025) 3235.
[J.132] S. Das, T. R. Lenka, and H. P. T. Nguyen, “Thermal Droop Minimization and Enhanced Opto-Electronic Properties in InGaN/GaN Ga-polar and N-polar Tunnel Junction Nanowire LEDs,” Materials Science in Semiconductor Processing, 190 (2025) 109326.
[J.131] T. R. Lenka, T. Rahman, M. B. S. Muthu, I. H. Emu, and H. P. T. Nguyen, “A Novel AlN/β-Ga2O3 HEMT with 2 kV and 600 GHz Operation,” Microsystem Technologies, 31 (2025) 3667.
[J.130] S. Bikesh, A. D. Singh, B. Shougaijam, T. Rahman, T. Lenka, and H. P. T. Nguyen, “High performance UV photodetector based on SnO2-TiO2 heterojunction nanowires,” Microsystem Technologies, 31 (2025) 3441.
[J.129] S. Das, M. B. S. Muthu, T. R. Lenka, and H. P. T. Nguyen, “Polarization-induced doping in AlInN/GaN nanowire ultraviolet light-emitting-diodes,” Journal of Nanophotonics, 19 (2025) 042203.
[J.128] R. Paul, S. Shukla, T. R. Lenka, F. A. Talukdar, and H. P. T. Nguyen, “Design and performance analysis of novel perovskite/CZTSe hybrid solar cell for high efficiency,” Solar Energy, 285 (2025) 113146.
[J.127] G. P. Rao, T. R. Lenka, and H. P. T. Nguyen, “Linearity analysis of III-Nitride/β-Ga2O3 Nano-HEMT for emerging RF/Microwave applications,” Microsystem Technologies, 31 (2025) 3101.
2024
[J.126] R. Paul, S. Shukla, T. R. Lenka, and H. P. T. Nguyen, “Device Structural Engineering and Modelling of Emerging III-Nitride/β-Ga2O3 Nano-HEMT for High-Power and THz Electronics,” Physica Scripta, 99 (2024) 125908.
[J.125] M. Morsali, S. Tabrizchi, R. T. Velpula, M. B. S. Muthu, H. P. T. Nguyen, M. Imani, A. Roohi, and S. Angizi, “Energy-Efficient Near-Sensor Event Detector Based on Multilevel Ga2O3 RRAM,” 2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI), 331–336.
[J.124] G. P. Rao, T. R. Lenka, H. P. T. Nguyen, N. E. I. Boukortt, and G. Crupi, “Effect of temperature dependence of 2DEG on device characteristics of field-plated recessed-gate III-nitride/β-Ga2O3 nano-HEMT,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 37 (2024) e3281.
[J.123] G. P. Rao, T. R. Lenka, and H. P. T. Nguyen, “Realization of Kink Effect in the Drain Characteristics of III-Nitride/β-Ga2O3 Nano-HEMT Due to Traps and Self-Heating,” Facta Universitatis, Series: Electronics and Energetics, 37 (2024) 289.
[J.122] G. P. Rao, T. R. Lenka, V. Vadalà, and H. P. T. Nguyen, “Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications,” Engineering Research Express, 6 (2024) 025312.
[J.121] S. Das, T. R. Lenka, F. A. Talukdar, H. P. T. Nguyen, and G. Crupi, “The role of indium composition in InxGa1−xN prestrained layer towards optical characteristics of EBL free GaN/InGaN nanowire LEDs for enhanced luminescence,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 37 (2024) e3169.
[J.120] R. Singh, G. P. Rao, T. R. Lenka, S. V. S. Prasad, N. E. I. Boukortt, G. Crupi, and H. P. T. Nguyen, “Design and simulation of T-gate AlN/β-Ga2O3 HEMT for DC, RF and high-power nanoelectronics switching applications,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 37 (2024) e3146.
[J.119] G. P. Rao, T. R. Lenka, and H. P. T. Nguyen, “Field-plated and back-barrier engineered wide-bandgap III-nitride/β-Ga2O3 nano-HEMT for emerging RF/microwave micro/nanoelectronics applications,” Microelectronics Reliability, 155 (2024) 115365.
[J.118] G. P. Rao, T. R. Lenka, N. E. I. Boukortt, and H. P. T. Nguyen, “Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field-plated III-nitride nano-HEMT on β-Ga2O3 substrate,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 37 (2024) e3138.
2023
[J.117] G. P. Rao, R. Singh, N. E. I. Boukortt, G. Crupi, and H. P. T. Nguyen, “Design and Simulation of T-Gate AlN/β-Ga2O3 HEMT for DC, RF and High-Power Nanoelectronics Switching Applications,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 7 (2023) e3146.
[J.116] S. Das, T. R. Lenka, F. A. Talukdar, H. P. T. Nguyen, and G. Crupi, “Polarization Engineered p-Type Electron Blocking Layer Free AlGaN Based UV-LED Using Quantum Barriers with Heart-Shaped Graded Al Composition for Enhanced Luminescence,” Micromachines, 14 (2023) 1926.
[J.115] R. Paul, T. R. Lenka, F. A. Talukdar, N. E. I. Boukortt, and H. P. T. Nguyen, “Investigation of Novel n-Doped a-Si/CZTSe Ultrathin-Film Solar Cell for Enhanced Performance,” IEEE Transactions on Electron Devices, 70 (2023) 4655.
[J.114] G. P. Rao, T. R. Lenka, N. E. I. Boukortt, S. Md. Sadaf, and H. P. T. Nguyen, “Investigation of Performance Enhancement of a Recessed Gate Field-Plated AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate with Variation of AlN Spacer Layer Thickness,” Journal of Materials Science: Materials in Electronics, 34 (2023) 1442.
[J.113] S. Das, T. R. Lenka, F. A. Talukdar, G. Crupi, and H. P. T. Nguyen, “High-performance DUV AlGaN multi-quantum well LED with step-graded n-type AlInGaN electron blocking layer,” Journal of Optoelectronics and Advanced Materials, 25 (2023) 311.
[J.112] G. P. Rao, T. R. Lenka, N. E. I. Boukortt, and H. P. T. Nguyen, “Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga2O3 Substrate,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 2023 e3138.
[J.111] S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, and H. P. T. Nguyen, “Efficiency and Radiative Recombination Rate Enhancement in GaN/AlGaN Multi-Quantum Well-based Electron Blocking Layer Free UV-LED for Improved Luminescence,” Facta Universitatis, Series: Electronics and Energetics, 36 (2023) 91.
[J.110] G. P. Rao, T. R. Lenka, and H. P. T. Nguyen, “Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications,” Materials Science and Engineering: B, 293 (2023) 116498.
[J.109] T. T. Doan, T. Q. Le, R. T. Velpula, M. B. S. Muthu, P. Deren, H. P. T. Nguyen, and H.-D. Nguyen, “Highly stable white light emission from III-nitride nanowire LEDs utilizing nanostructured alumina doped Mn4+ and Mg2+,” ACS Omega, 8 (2023) 8501.
[J.108] S. Shrestha, R. T. Velpula, B. P. Pandey, M. B. S. Muthu, T. A. N. Nguyen, and H. P. T. Nguyen, “Characteristics of leakage currents in InGaN/AlGaN nanowire based red micro-light-emitting diodes,” Applied Optics, 62 (2023) 455.
[J.107] S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, and H. P. T. Nguyen, “Design and Analysis of Novel High-Performance III-Nitride MQW-based Nanowire White-LED using HfO2/SiO2 Encapsulation,” Optical and Quantum Electronics, 55 (2023) 67.
[J.106] G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh, Nour El. I. Boukortt, Sharif Md. Sadaf, and H. P. T. Nguyen, “Comparative Study of III-Nitride Nano-HEMTs on different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications,” Journal of Electronic Materials, 52 (2023) 1948.
[J.105] R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Low-power multilevel resistive switching in β-Ga2O3 based RRAM devices,” Nanotechnology, 34 (2023) 075201.
2022
[J.104] G. P. Rao, R. Singh, T. R. Lenka, and H. P. T. Nguyen, “Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications,” Journal of the Korean Physical Society, 81 (2022) 876.
[J.103] P. K. Esubonteng, H. P. T. Nguyen, and R. Rojas-Cessa, “STAR: A Carrier Sense Agnostic MAC Scheme for a Crowded NLoS-FSOC Optical LAN,” Journal of Optical Communications and Networking, 14 (2022) 815.
[J.102] S. Das, T. R. Lenka, S. Sadaf, R. T. Velpula, and H. P. T. Nguyen, “Impact of Prestrained Graded InGaN/GaN Interlayer towards Enhanced Optical Characteristics of Multi-quantum Well LED based on Silicon Substrate,” Applied Optics, 61 (2022) 8951.
[J.101] D. K. Panda, T. R. Lenka, R. Singh, V. Goyal, Nour El. I. Boukortt, and H. P. T. Nguyen, “Analytical Modelling of Dielectric Modulated Negative Capacitance-MoS2 FET for Next-Generation Label-Free Biosensor,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 36 (2022) 1.
[J.100] (Invited) H. P. T. Nguyen, R. T. Velpula, M. Patel, B. Jain, and A. Marangon, “Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes Using Photonic Crystal Structures,” ECS Transactions, 109 (2022) 3.
[J.99] G. P. Rao, R. Singh, T. R. Lenka, N. E. Boukortt, and H. P. T. Nguyen, “Simulation Modelling of III-Nitride/β-Ga2O3 Nano-HEMT for Microwave and Millimeter Wave Application,” International Journal of RF and Microwave Computer-Aided Engineering, 32 (2022) e23416.
[J.98] (Invited) H. P. T. Nguyen, “Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices,” Light: Science & Applications, 11 (2022) 164.
[J.97] R. T. Velpula, B. Jain, M. Patel, F. M. Shakiba, N. Q. Toan, H.-D. Nguyen, and H. P. T. Nguyen, “High-efficiency InGaN blue LEDs with reduced positive sheet polarization,” Applied Optics, 61 (2022) 4967.
[J.96] R. Singh, T. R. Lenka, D. K. Panda, H. P. T. Nguyen, N. E. I. Boukortt, and G. Crupi, “Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga2O3 HEMT,” Materials Science in Semiconductor Processing, 145 (2022) 106627.
[J.95] S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, H. P. T. Nguyen, and G. Crupi, “Effects of Polarization-Induced Doping and Graded Composition in an Advanced Multiple Quantum Well InGaN/GaN UV-LED for Enhanced Light Technology,” Engineering Research Express, 4 (2022) 015030.
[J.94] V. Sivathanu, T. R. Lenka, V. Goyal, and H. P. T. Nguyen, “Carrier transport mechanism in bottom gate thin-film transistor with SnO as active layer for CMOS displays,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 35 (2022) e2975.
[J.93] D. H. Anh, N. Q. Toan, P. C. T. Tung, C. T. Son, H. P. T. Nguyen, and H.-D. Nguyen, “Fabrication of ultrathin alumina membranes utilizing waste aluminium cans,” Vietnam Journal of Chemistry, 60 (2022) 84.
[J.92] T. R. Lenka, R. Singh, S. K. Tripathy, V. Goyal, T. K. Nguyen, and H. P. T. Nguyen, “2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 35 (2022) e2941.
[J.91] R. T. Velpula, B. Jain, R. Wang, T. R. Lenka, and H. P. T. Nguyen, “Polarization-Engineered P-type Electron-Blocking Layer Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for the Enhanced Carrier Transport,” Journal of Electronic Materials, 55 (2022) 838.
2021
[J.90] H. Q. T. Bui, D. H. Anh, D. T. Tuyet, R. T. Velpula, B. Jain, H. P. T. Nguyen, and H.-D. Nguyen, “Enhancing Efficiency of AlGaN Ultraviolet-B Light-Emitting Diodes with Graded p-AlGaN Hole Injection Layer,” Physica Status Solidi (a), 218 (2021) 2100003.
[J.89] S. Rajan, T. R. Lenka, D. Panda, and H. P. T. Nguyen, “Investigation of β-Ga2O3-based HEMTs using 2D Simulations for Low Noise Amplification and RF Applications,” Engineering Research Express, 3 (2021) 035042.
[J.88] T. H. Q. Vu, T. T. Doan, B. Jain, R. T. Velpula, T. C. T. Pham, H. P. T. Nguyen, and H.-D. Nguyen, “Improving Color Quality of Nanowire White Light-Emitting Diodes with Mn4+ Doped Fluoride Nanosheets,” Micromachines, 12 (2021) 965.
[J.87] R. T. Velpula, B. Jain, T. R. Lenka, and H. P. T. Nguyen, “Controlled Electron Leakage in Electron Blocking Layer Free InGaN/GaN Nanowire Light-Emitting Diodes,” Facta Universitatis, Series: Electronics and Energetics, 34 (2021) 393.
[J.86] R. Singh, T. R. Lenka, and H. P. T. Nguyen, “Analytical Study of Energy Band Parameters and Lattice Temperature on Conduction Band Offset in AlN/Ga2O3 HEMT,” Facta Universitatis, Series: Electronics and Energetics, 34 (2021) 323.
[J.85] M. Patel, B. Jain, R. T. Velpula, and H. P. T. Nguyen, “Effect of HfO2 Passivation Layer on Light Extraction Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes,” ECS Transactions, 102 (2021) 35.
[J.84] B. Jain, R. T. Velpula, M. Patel, and H. P. T. Nguyen, “Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes,” Applied Optics, 60 (2021) 3088.
[J.83] B. Jain, R. T. Velpula, M. Patel, S. M. Sadaf, and H. P. T. Nguyen, “Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers,” Micromachines, 12 (2021) 334.
[J.82] B. Jain, R. T. Velpula, M. Patel, and H. P. T. Nguyen, “High performance electron blocking layer free ultraviolet light-emitting diodes,” Proc. SPIE, Physics and Simulation of Optoelectronic Devices XXIX, 11680 (2021) 1168012.
[J.81] R. Singh, D. Panda, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “A novel β-Ga2O3 HEMT with fT of 166 GHz and X-band POUT of 2.91 W/mm,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 34 (2021) e2794.
2020
[J.80] D. K. Panda, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, and H. P. T. Nguyen, “Single and Double Gate based GaN MOS-HEMTs for Design of Low Noise Amplifier: A Comparative Study,” IET Circuits, Devices & Systems, 14 (2020) 1018.
[J.79] H. Q. T. Bui, R. T. Velpula, B. Jain, and H. P. T. Nguyen, “III-Nitride Based Narrow Band Far-UVC LEDs for Airborne and Surface Disinfection,” ECS Transactions, 98 (2020) 83.
[J.78] D. K. Panda, R. Singh, T. R. Lenka, T. T. Pham, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study,” IET Circuits, Devices & Systems, 14 (2021) 1018.
[J.77] R. T. Velpula, B. Jain, S. Velpula, H.-D. Nguyen, and H. P. T. Nguyen, “High Performance Electron Blocking Layer Free Deep Ultraviolet Light-Emitting Diodes Implementing a Strip-in-a-Barrier Structure,” Optics Letters, 45 (2020) 5125.
[J.76] R. Singh, T. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “Investigation of Current Collapse and Recovery Time due to Deep Level Defect Traps in β-Ga2O3 HEMT,” Journal of Semiconductors, 41 (2020) 102802.
[J.75] Editor’s Pick: H. Q. T. Bui, R. T. Velpula, B. Jain, M. R. Philip, H. D. Tong, T. R. Lenka, and H. P. T. Nguyen, “High Performance AlGaN Nanowire Ultraviolet Light-Emitting Diodes with Potassium Hydroxide and Ammonium Sulfide Surface Passivation,” Applied Optics, 59 (2020) 7352.
[J.74] D. T. Tuyet, V. T. H. Quan, B. Bondzior, P. J. Deren, R. T. Velpula, H. P. T. Nguyen, L. A. Tuyen, N. Q. Hung, and H.-D. Nguyen, “High red emission performance of porous structural K2SiF6:Mn4+ dots-in-nanosphere synthesized using soft templates,” Optics Express, 28 (2020) 26189.
[J.73] B. Jain, R. T. Velpula, S. Velpula, H.-D. Nguyen, and H. P. T. Nguyen, “Enhanced Hole Transport in AlGaN Deep Ultraviolet Light-Emitting Diodes Using Double-Side Step Graded Superlattice Electron Blocking Layer,” Journal of the Optical Society of America B, 27 (2020) 2564.
[J.72] R. Singh, T. R. Lenka, and H. P. T. Nguyen, “Optimization of Dynamic Source Resistance in a β-Ga2O3 HEMT and Its Effect on Electrical Characteristics,” Journal of Electronic Materials, 49 (2020) 5266.
[J.71] B. Jain, R. T. Velpula, M. Tumuna, H. Q. T. Bui, J. Jude, T. T. Pham, T. V. Le, A. V. Hoang, R. Wang, and H. P. T. Nguyen, “Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures,” Optics Express, 28 (2020) 22909.
[J.70] R. T. Velpula, B. Jain, H. Q. T. Bui, J. Jude, M. Tumuna, H.-D. Nguyen, T. R. Lenka, and H. P. T. Nguyen, “Improving carrier transport in AlGaN deep ultraviolet light-emitting diodes using a strip-in-a-barrier structure,” Applied Optics, 59 (2020) 5276.
[J.69] R. Singh, D. Panda, T. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “The Dawn of Ga2O3 HEMTs for High Power Electronics – A Review,” Materials Science in Semiconductor Processing, 119 (2020) 105216.
[J.68] R. T. Velpula, M. R. Philip, B. Jain, H.-D. Nguyen, R. Wang, and H. P. T. Nguyen, “Epitaxial Growth and Characterization of AlInN Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum,” Scientific Reports, 10 (2020) 2547.
[J.67] R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, T. V. Le, H.-D. Nguyen, T. R. Lenka, and H. P. T. Nguyen, “Numerical Investigation on the Device Performance of Electron Blocking Layer Free AlInN Nanowire Deep Ultraviolet Light-Emitting Diodes,” Optical Materials Express, 10 (2020) 472.
[J.66] B. Jain, R. T. Velpula, H. Q. T. Bui, H.-D. Nguyen, T. R. Lenka, T. K. Nguyen, and H. P. T. Nguyen, “High Performance Electron Blocking Layer Free InGaN/GaN Nanowire White-Light-Emitting Diodes,” Optics Express, 28 (2020) 665.
2019
[J.65] Invited Review: R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “Full-Color III-Nitride Nanowire Light-Emitting Diodes,” Journal of Advanced Engineering and Computation, 3 (2019) 551.
[J.64] H. Q. T. Bui, R. T. Velpula, B. Jain, O. H. Aref, H.-D. Nguyen, T. R. Lenka, and H. P. T. Nguyen, “Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays,” Micromachines, 10 (2019) 492.
[J.63] P. T. Dang, K. Q. Le, Q. M. Ngo, H. P. T. Nguyen, and T. K. Nguyen, “Guided Mode Resonance Filter with Ultra Narrow Bandwidth over the Visible Frequencies for Label-Free Optical Sensor,” Journal of Advanced Engineering and Computation, 3 (2019) 405.
[J.62] M. Rajan Philip, R. Babu, V. Krishnakumar, and H. P. T. Nguyen, “Enhanced Efficiency of Dye-Sensitized Solar Cells based on Polyol Synthesized Nickel-Zinc Oxide Composites,” Journal of Electronic Materials, 48 (2019) 252.
2018
[J.61] T. T. Hoang, Q. M. Ngo, D. L. Vu, and H. P. T. Nguyen, “Controlling Fano Resonances in Multilayer Dielectric Gratings Towards Optical Bistable Devices,” Scientific Reports, 8 (2018) 16404.
[J.60] M. Rajan Philip, H. P. T. Nguyen, R. Babu, V. Krishnakumar, and T. H. Q. Bui, “Polyol Synthesis of Zinc Oxide-Graphene Composites: Enhanced Dye-Sensitized Solar Cell Efficiency,” Current Nanomaterials, 3 (2018) 52.
[J.59] M. Rajan Philip and H. P. T. Nguyen, “Full-Color InGaN/AlGaN Nanowire LEDs for Solid-State Lighting and Display,” LED Professional, Issue 66 (2018) 50.
[J.58] Khai Q. Le, S. K. Ho, N. H. T. Tran, Q. M. Ngo, and H. P. T. Nguyen, “Observation of Fano-like resonance in dual-blade-like shaped nanostructures,” Journal of Physics D: Applied Physics, 52 (2018) 045106.
[J.57] M. Rajan Philip, T. H. Q. Bui, M. Djavid, M. N. Bhuyian, and H. P. T. Nguyen, “Phosphor Free III-Nitride Nanowire White-Light Emitting Diodes for Visible Light Communication,” Proc. SPIE 10595, Active and Passive Smart Structures and Integrated Systems XII, 105953.
[J.56] M. Rajan Philip, D. D. Choudhary, T. H. Q. Bui, M. Djavid, and H. P. T. Nguyen, “Molecular Beam Epitaxial Growth and Device Characterization of AlGaN UV-B Nanowire Light-Emitting Diodes,” Journal of Advanced Optics and Photonics, 1 (2018) 3.
[J.55] T. T. Hoang, Q. M. Ngo, D. L. Vu, K. Q. Le, T. K. Nguyen, and H. P. T. Nguyen, “Induced high-order resonance linewidth shrinking with multiple coupled resonators in silicon-organic hybrid slotted two-dimensional photonic crystals for reduced optical switching power in bistable devices,” Journal of Nanophotonics, 12 (2018) 016014.
[J.54] M. Djavid, D. D. Choudhary, M. R. Philip, T. H. Q. Bui, O. Akinnouye, T. T. Pham, and H. P. T. Nguyen, “Effects of Optical Absorption in Deep Ultraviolet Nanowire Light-Emitting Diodes,” Photonics and Nanostructures – Fundamentals and Applications, 28 (2018) 106.
[J.53] M. Djavid, M. H. T. Dastjerdi, M. R. Philip, D. D. Choudhary, T. T. Pham, A. Khreishah, and H. P. T. Nguyen, “Photonic Crystal Based Permutation Switch for Optical Networks,” Photonic Network Communications, 35 (2018) 90.
2017
[J.52] M. R. Philip, D. D. Choudhary, M. Djavid, T. H. Q. Bui, H.-D. Pham, D. Misra, K. Q. Le, J. Piao, and H. P. T. Nguyen, “Fabrication of Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes on Metal Substrates for Flexible Photonics,” ACS Omega, 2 (2017) 5708.
[J.51] M. Djavid, M. H. T. Dastjerdi, M. R. Philip, D. D. Choudhary, A. Khreishah, and H. P. T. Nguyen, “4-Port Reciprocal Optical Circulators Employing Photonic Crystals for Integrated Photonics Circuits,” Optik, 144 (2017) 586.
[J.50] M. R. Philip, D. D. Choudhary, M. Djavid, K. Q. Le, and H. P. T. Nguyen, “High Efficiency Green/Yellow and Red InGaN/AlGaN Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” Journal of Science: Advanced Materials and Devices, 2 (2017) 150.
[J.49] Editor’s Pick: M. R. Philip, D. D. Choudhary, M. Djavid, M. N. Bhuyian, J. Piao, D. Misra, T. T. Pham, and H. P. T. Nguyen, “Controlling Color Emission of InGaN/AlGaN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” Journal of Vacuum Science & Technology B, 35 (2017) 02B108.
2016
[J.48] H. P. T. Nguyen, S. Arafin, J. Piao, and T. V. Cuong, “Nanostructured Optoelectronics: Materials and Devices,” Journal of Nanomaterials, 2016 (2016) 2051908.
[J.47] K. Q. Le, H. P. T. Nguyen, Q. M. Ngo, A. Canimoglu, and N. Can, “Experimental and numerical optical characterization of Plasmonic Copper Nanoparticles Embedded in ZnO Fabricated by Ion Implantation and Annealing,” Journal of Alloys and Compounds, 669 (2016) 246.
[J.46] R. Wang, Y. H. Ra, Y. Wu, S. Zhao, H. P. T. Nguyen, I. Shih, and Z. Mi, “Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire,” Proc. SPIE OPTO, 97481S.
[J.45] K. Q. Le, J. Bai, and H. P. T. Nguyen, “Fano-induced spontaneous emission enhancement of molecule placed in a cluster of asymmetrically-arranged metallic nanoparticles,” Journal of Luminescence, 173 (2016) 199.
2015
[J.44] S. Zhao, H. P. T. Nguyen, M. G. Kibria, and Z. Mi, “III-nitride nanowire Optoelectronics,” Progress in Quantum Electronics, 44 (2015) 14.
[J.43] S. Sadaf, Y. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white-light emitting diodes,” Nano Letters, 15 (2015) 6696.
[J.42] S. Woo, M. Bugnet, H. P. T. Nguyen, Z. Mi, and G. A. Botton, “Atomic Ordering in InGaN alloys within Nanowire Heterostructures,” Nano Letters, 15 (2015) 6413.
[J.41] S. Woo, N. Gauquelin, H. P. T. Nguyen, Z. Mi, and G. A. Botton, “Interplay of Strain and Indium Incorporation in InGaN/GaN Dot-in-a-Wire Nanostructures by Scanning Transmission Electron Microscopy,” Nanotechnology, 24 (2015) 344002.
[J.40] Invited: H. P. T. Nguyen and Y. Evo, “Phosphor-Free III-Nitride Nanowire White Light Emitting Diodes: Challenges and Prospects,” ECS Transactions, 66 (2015) 213.
[J.39] H. P. T. Nguyen, M. Djavid, X. Liu, Q. Wang, and Z. Mi, “High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes,” Proc. SPIE, 9383 (2015) 9383007.
[J.38] G. Sun, R. Chen, Y. Ding, H. P. T. Nguyen, and Z. Mi, “InGaN/GaN dot-in-a-wire: Ultimate terahertz nanoemitters,” Laser & Photonics Reviews, 9 (2015) 105.
[J.37] H. P. T. Nguyen, M. Djavid, S. Woo, X. Liu, A. T. Connie, S. Sadaf, Q. Wang, G. Botton, I. Shih, and Z. Mi, “Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers,” Scientific Reports, 5 (2015) 7744.
[J.36] K. H. Li, Q. Wang, H. P. T. Nguyen, S. Zhao, and Z. Mi, “Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy,” Physica Status Solidi (a), doi: 10.1002/pssa.201431726.
2014
[J.35] R. Wang, H. P. T. Nguyen, A. T. Connie, I. Shih, and Z. Mi, “Color-Tunable, Phosphor-Free InGaN Nanowire Light-Emitting Diode Arrays Monolithically Integrated on Silicon,” Optics Express, 22 (2014) A1768.
[J.34] A. F. Jason, H. P. T. Nguyen, Z. Mi, R. Leonelli, and L. Stafford, “Improvement of the emission properties from InGaN/GaN dot-in-a-wire nanostructures after treatment in the flowing afterglow of a microwave N2 plasma,” Nanotechnology, 25 (2014) 435606.
[J.33] Q. Wang, X. Liu, M. G. Kibria, H. P. T. Nguyen, S. Zhao, K. H. Li, and Z. Mi, “P-type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy,” Nanoscale, 6 (2014) 9970.
[J.32] M. Djavid, H. P. T. Nguyen, S. Zhang, K. Cui, S. Fan, and Z. Mi, “Tunnel injection InGaN/GaN dot-in-a-wire white-light emitting diodes,” Semiconductor Science and Technology, 29 (2014) 085009.
[J.31] S. Zhang, A. T. Connie, D. A. Laleyan, H. P. T. Nguyen, Q. Wang, J. Song, I. Shih, and Z. Mi, “On the carrier injection efficiency and thermal properties of InGaN/GaN axial nanowire light emitting diodes,” IEEE Journal of Quantum Electronics, 50 (2014) 483.
[J.30] M. G. Kibria, S. Zhao, F. A. Chowdhury, Q. Wang, H. P. T. Nguyen, M. L. Trudeau, H. Guo, and Z. Mi, “Ultrahigh efficiency spontaneous overall water splitting on p-type GaN nanowires,” Nature Communications, 5 (2014) 3825.
[J.29] Z. Mi, H. P. T. Nguyen, M. Djavid, S. Zhang, A. T. Connie, S. M. Sadaf, Q. Wang, S. Zhao, and I. Shih, “High Power phosphor-free InGaN/GaN/AlGaN core-shell nanowire white light emitting diodes on Si substrates,” ECS Transactions, 61 (2014) 9.
[J.28] Z. Mi, H. P. T. Nguyen, S. Zhang, A. T. Connie, Md. G. Kibria, Q. Wang, and I. Shih, “Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes,” SPIE Proceedings, 9003 (2014) 900306.
[J.27] A. T. Connie, H. P. T. Nguyen, S. M. Sadaf, I. Shih, and Z. Mi, “Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy,” Journal of Vacuum Science & Technology B, 32 (2014) 02C113.
[J.26] H. P. T. Nguyen, Q. Wang, and Z. Mi, “Phosphor-free InGaN/GaN dot-in-a-wire white light emitting diodes on Cu substrates,” Journal of Electronic Materials, 43 (2014) 868.
2013
[J.25] Y. Kamali, B. R. Walsh, J. Mooney, H. P. T. Nguyen, C. Brosseau, R. Leonelli, Z. Mi, and P. Kambhampati, “Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures,” Journal of Applied Physics, 114 (2013) 164305.
[J.24] H. P. T. Nguyen, S. Zhang, A. Connie, Md. Kibria, Q. Wang, I. Shih, and Z. Mi, “Breaking the carrier injection bottleneck of phosphor-free nanowire white light emitting diodes,” Nano Letters, 13 (2013) 5437.
[J.23] M. G. Kibria, H. P. T. Nguyen, K. Cui, S. Zhao, D. Liu, H. Guo, M. L. Trudeau, S. Paradis, H. Abou-Rachid, and Z. Mi, “One-step overall water splitting under visible light using multi-band InGaN/GaN nanowire heterostructures,” ACS Nano, 7 (2013) 7886.
[J.22] B. AlOtaibi, H. P. T. Nguyen, S. Zhao, M. G. Kibria, S. Fan, and Z. Mi, “Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode,” Nano Letters, 13 (2013) 4356.
[J.21] S. Zhang, Y. Li, S. Fathololoumi, H. P. T. Nguyen, Q. Wang, Z. Mi, Q. Li, and G. T. Wang, “On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping,” AIP Advances, 3 (2013) 082103.
[J.20] Q. Wang, A. Connie, H. P. T. Nguyen, M. G. Kibria, S. Zhao, S. Sadaf, and Z. Mi, “High efficiency, spectrally pure 340 nm ultraviolet emission from AlxGa1-xN nanowire based light emitting diodes,” Nanotechnology, 24 (2013) 345201.
[J.19] S. Zhao, M. G. Kibria, Q. Wang, H. P. T. Nguyen, and Z. Mi, “Growth of large-scale vertically aligned GaN nanowire heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy,” Nanoscale, 5 (2013) 5283.
[J.18] H. P. T. Nguyen, M. Djavid, and Z. Mi, “Nonradiative recombination mechanism in phosphor-free GaN-based nanowire white light emitting diodes and the effect of ammonium sulfide surface passivation,” ECS Transactions, 53 (2013) 93.
[J.17] B. AlOtaibi, M. Harati, S. Fan, S. Zhao, H. P. T. Nguyen, M. G. Kibria, and Z. Mi, “High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode,” Nanotechnology, 24 (2013) 175401.
[J.16] Z. Mi, H. P. T. Nguyen, S. Zhang, K. Cui, and M. Djavid, “Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultra-high efficiency phosphor-free white light emitting diodes,” Proc. SPIE, 8634 (2013) 86340B.
[J.15] J. Titus, H. P. T. Nguyen, Z. Mi, and A. G. U. Perera, “Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy,” Applied Physics Letters, 102 (2013) 121901.
[J.14] V. Cardin, L. I. Dion-Bertrand, P. Gregoire, H. P. T. Nguyen, M. Sakowicz, Z. Mi, C. Silva, and R. Leonelli, “Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111),” Nanotechnology, 24 (2013) 045702.
2012
[J.13] A. Shih, S. Fathololoumi, S. Zhao, B. L. Huy, H. P. T. Nguyen, I. Shih, and Z. Mi, “Negative differential resistance in GaN/AlN heterostructure nanowires,” International Journal of Theoretical and Applied Nanotechnology, 1 (2012) 105.
[J.12] Q. Wang, H. P. T. Nguyen, K. Cui, and Z. Mi, “High efficiency ultraviolet emission from AlxGa1-xN core-shell nanowire heterostructures grown on Si(111) by molecular beam epitaxy,” Applied Physics Letters, 101 (2012) 043115.
[J.11] H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid, and Z. Mi, “Controlling electron overflow in phosphor-free InGaN/GaN nanowire white-light-emitting diodes,” Nano Letters, 12 (2012) 1317.
[J.10] H. P. T. Nguyen, M. Djavid, Kai Cui, and Z. Mi, “Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon,” Nanotechnology, 23 (2012) 194012.
[J.9] H. P. T. Nguyen, S. Zhang, K. Cui, and Z. Mi, “High efficiency InGaN/GaN dot-in-a-wire red light emitting diodes,” IEEE Photonics Technology Letters, 24 (2012) 321.
2011
[J.8] S. Fathololoumi, H. P. T. Nguyen, and Z. Mi, “Self-organized In(Ga)N nanowire heterostructures and optoelectronic device applications,” Nanoscience & Nanotechnology-Asia, 2 (2011) 123.
[J.7] H. P. T. Nguyen, K. Cui, S. Zhang, Saeed Fathololoumi, and Z. Mi, “Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon,” Nanotechnology, 22 (2011) 445202.
[J.6] H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Letters, 11 (2011) 1919.
[J.5] H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, “Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN dot-in-a-wire white light emitting diodes on Si(111),” ECS Transactions, 35 (2011) 41.
[J.4] H. P. T. Nguyen, Y.-L. Chang, I. Shih, and Z. Mi, “InN p-i-n nanowire solar cells on Si,” IEEE Journal of Selected Topics in Quantum Electronics: Nanowires, 17 (2011) 1062.
2010
[J.3] Z. Mi, H. P. T. Nguyen, K. Cui, X. Han, S. Zhang, and Y.-L. Chang, “Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si,” Proc. SPIE, 7847 (2010) 784702.
2009
[J.2] H. P. T. Nguyen, K. H. Kim, H. Lim, and J. J. Lee, “Characteristics of high efficiency InGaP/InGaAs double junction solar cells grown on GaAs substrates,” AIP Conference Proceedings, 1169 (2009) 149.
[J.1] E. S. Choi, H. M. Doan, H. P. T. Nguyen, S. Kim, H. Lim, F. Rotermund, and J. J. Lee, “Cathode-luminescence study of photonic crystal green InxGa1-xN/InyGa1-yN light emitting diodes,” Journal of Crystal Growth, 311 (2009) 863.
Conference Presentations
Show all conference presentations (2010–2026)
[C.86] (Invited) H. P. T. Nguyen, “Molecular Beam Epitaxial Growth of Robust LEDs for Harsh Environment,” International Workshop on Photonics in Semiconductor and Quantum Materials, Ho Chi Minh City, Vietnam, September 24, 2026.
[C.85] (Invited) H. P. T. Nguyen, “Development of III-Nitride LEDs for Extreme Conditions,” Ultrawide Bandgap Semiconductor Workshop, Texas State University, August 13–14, 2026.
[C.84] (Invited) H. P. T. Nguyen, “High-Efficiency AlInN Nanowire Light-Emitting Diodes grown by Molecular Beam Epitaxy,” IEEE Research and Applications of Photonics in Defense, Miramar Beach, Florida, United States, August 5–7, 2026.
[C.83] (Invited) H. P. T. Nguyen, “III-nitride Nanowire Light-Emitting Diodes for Extreme Environments,” UTA/NTX Photonics/Semiconductor workshop, Arlington, Texas, February 27, 2026.
[C.82] G. Purnachandrarao, B. Saritha, N. Kumar, P. Kar, T. R. Lenka, and H. P. T. Nguyen, “Impact of Spacer on Transport Properties of Lattice Matched III-Nitride/β-Ga2O3 HEMT,” 2025 IEEE Silchar Subsection Conference (SILCON), November 06–08, 2025.
[C.81] N. Kumar, P. Kar, T. R. Lenka, T. Rahman, I. H. Emu, and H. P. T. Nguyen, “Modelling of AlGaN/GaN HEMT with and without Graded Multiple Quantum Wells for Quantum Computing Applications,” 2025 IEEE Nanotechnology Materials and Devices Conference (NMDC), October 9–11, 2025 (Virtual).
[C.80] (Invited) H. P. T. Nguyen, “III-Nitride Nanostructures for Extreme Environments,” IEEE Research and Applications of Photonics in Defense, Miramar Beach, Florida, United States, August 13–15, 2025.
[C.79] (Invited) H. P. T. Nguyen, “III-Nitride Nanostructured Light-Emitting Diodes: Materials, Device Fabrication and Applications,” Vietnam National University, Vietnam, July 15, 2025.
[C.78] (Distinguished Lecture) H. P. T. Nguyen, “III-Nitride Nanostructures for Light-Emitters and Solar Cells,” National Institute of Technology Silchar, India, June 25, 2025.
[C.77] M. B. S. Muthu, I. E. Emu, T. Rahman, T. R. Lenka, and H. P. T. Nguyen, “Enhanced Efficiency of AlGaN Deep Ultraviolet Light-Emitting Diodes using Lens-Shaped Quantum Barriers,” Compound Semiconductor Week, Banff, Alberta, Canada, May 27–30, 2025.
[C.76] M. B. S. Muthu, I. E. Emu, T. Rahman, T. R. Lenka, and H. P. T. Nguyen, “Enhanced Efficiency of AlGaN Deep Ultraviolet Light-Emitting Diodes using Lens-Shaped Quantum Barriers,” Compound Semiconductor Week, Banff, Alberta, Canada, May 27–30, 2025.
[C.75] M. B. S. Muthu, I. E. Emu, T. Rahman, T. R. Lenka, and H. P. T. Nguyen, “Optimizing AlInN/GaN Nanowire UV LEDs through Polarization-Induced Doping,” Compound Semiconductor Week, Banff, Alberta, Canada, May 27–30, 2025.
[C.74] (Invited) H. P. T. Nguyen, “III-Nitride Nanostructures for High Efficiency Ultraviolet Light-Emitters,” IEEE Research and Applications of Photonics in Defense, Miramar Beach, Florida, United States, August 14–16, 2024.
[C.73] M. B. S. Muthu, G. P. Rao, T. R. Lenka, and H. P. T. Nguyen, “AlGaN/GaN Normally Off HEMT for High-Power Electronics Applications,” Power America 2024 Virtual WBG Summer Workshop.
[C.72] G. P. Rao, T. R. Lenka, S. Das, and H. P. T. Nguyen, “DC and RF Characteristics Study of III-Nitride β-Ga2O3 Nano-HEMT with the variation of Relative Gate Positions,” 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
[C.71] (Invited) H. P. T. Nguyen, “III-Nitride Nanostructures for High Efficiency Ultraviolet Light-Emitters,” IEEE Research and Applications of Photonics in Defense, Miramar Beach, Florida, United States, September 11–13, 2023.
[C.70] (Invited) H. P. T. Nguyen, “Full-Color Micro Light-Emitting Diodes Using Group III-Nitride Nanowires,” 25th Photonics North Conference, Montreal, Quebec, Canada, June 12–15, 2023.
[C.69] M. B. S. Muthu, R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Investigation of Performance Improvements in AlGaN Deep Ultraviolet Light-Emitting Diodes using Lens-Shaped Quantum Barriers,” 25th Photonics North Conference, Montreal, Quebec, Canada, June 12–15, 2023.
[C.68] S. Das, T. R. Lenka, F. A. Talukdar, and H. P. T. Nguyen, “Design of Deep-UV Nanowire LED with Al2O3 Quantum Dots and Step-Graded n-Type AlInGaN Electron Blocking Layer for High Quantum Efficiency,” IECON 2023 – 49th Annual Conference of the IEEE Industrial Electronics Society, October 16–19, 2023, Singapore.
[C.67] S. Das, T. R. Lenka, F. A. Talukdar, and H. P. T. Nguyen, “III-Nitride Nanowire LEDs for Enhanced Light Technology,” 2023 IEEE 33rd International Conference on Microelectronics, October 16–18, 2023.
[C.66] G. Purnachandra Rao, T. R. Lenka, and H. P. T. Nguyen, “Performance Analysis of Gate Engineered III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics,” 2023 IEEE International Symposium on Circuits & Systems (ISCAS 2023), Monterey, California, USA, May 21–25, 2023.
[C.65] R. Paul, S. Shukla, T. R. Lenka, F. A. Talukdar, Nour El. I. Boukortt, and H. P. T. Nguyen, “Design and Analysis of High-Efficiency Eco-friendly Lead-free Perovskite Solar Cell with TiO2 and C60 Electron Transport Layers,” 5th IEEE International Conference on Devices for Integrated Circuits (DevIC 2023), April 7–8, 2023, Kalyani, India.
[C.64] (Invited) H. P. T. Nguyen, R. T. Velpula, B. Jain, M. Patel, and A. Marangon, “Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures,” The 2023 SPIE Photonics West, San Francisco, California, US, January 28 – February 2, 2023.
[C.63] R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Mitigating positive sheet polarization in high efficiency InGaN blue light-emitting diodes,” The 2023 SPIE Photonics West, San Francisco, California, United States, January 28 – February 2, 2023.
[C.62] B. Jain, R. T. Velpula, and H. P. T. Nguyen, “Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes,” The 2023 SPIE Photonics West, San Francisco, California, United States, January 28 – February 2, 2023.
[C.61] S. Das, T. R. Lenka, Fazal A. Talukdar, Giovanni Crupi, and H. P. T. Nguyen, “Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED,” 6th IEEE International Conference on Emerging Electronics (ICEE-2022), December 11–14, 2022, Bangalore, India.
[C.60] G. Purnachandra Rao, Nistha Baruah, T. R. Lenka, Rajan Singh, Sharif Md. Sadaf, and H. P. T. Nguyen, “Simulation Modeling of AlGaN/AlN/GaN Nano-HEMT on β-Ga2O3 Substrate for Emerging Terahertz Applications,” 6th IEEE International Conference on Emerging Electronics (ICEE-2022), December 11–14, 2022, Bangalore, India.
[C.59] R. Singh, N. E. Boukortt, G. P. Rao, T. R. Lenka, and H. P. T. Nguyen, “The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga2O3 Nano-HEMT,” The 2nd IEEE Electron Device Kolkata Conference 2022 (EDKCON 2022), Kolkata, India, November 26–27, 2022.
[C.58] Invited: H. P. T. Nguyen, R. T. Velpula, and B. Jain, “Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes using Photonic Crystal Structures,” The 242nd Electrochemical Society Meeting, Atlanta, Georgia, October 9–13, 2022.
[C.57] Invited: H. P. T. Nguyen, R. T. Velpula, and B. Jain, “InGaN/AlGaN Red-Emitting Nanowire LEDs for Monolithic Micro-LED Displays,” The 242nd Electrochemical Society Meeting, Atlanta, Georgia, October 9–13, 2022.
[C.56] G. Purnachandra Rao, T. R. Lenka, Nour El. I. Boukortt, H. P. T. Nguyen, and G. Crupi, “Breakdown Characteristics Study of III-Nitride/β-Ga2O3 Nano-HEMT as a function of Field-Plate Length & AlN Nucleation Layer Thickness,” 2022 IEEE Calcutta Conference (CALCON), December 10–11, 2022, Kolkata.
[C.55] S. Das, T. R. Lenka, F. Talukdar, R. T. Velpula, H. P. T. Nguyen, and G. Crupi, “Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW based LEDs,” The 22nd International Conference on Numerical Simulation of Optoelectronic Devices, Virtual, September 12–16, 2022.
[C.54] Distinguished Lecture: H. P. T. Nguyen, “III-nitride Nanowire Ultraviolet Light-Emitting Diodes,” IEEE EDS Summer School on Recent Trends in Micro/Nanoelectronic Devices, Virtual, August 20–24, 2022.
[C.53] S. Das, T. R. Lenka, F. Talukdar, R. T. Velpula, H. P. T. Nguyen, and G. Crupi, “Simulation Modelling of High-Efficiency AlGaN/GaN Multi-Quantum Well UV-LED with Double-Sided Graded Staircase EBL for Enhanced Light Technology,” 26th International Symposium on VLSI Design and Test, Indian Institute of Technology Jammu, July 17–19, 2022.
[C.52] R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” Compound Semiconductor Week, Ann Arbor, Michigan, June 01–03, 2022.
[C.51] Invited: H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes: Materials, Device Fabrication, and Applications,” IEEE EDS Nepal Chapter, March 23, 2022.
[C.50] P. Raut, U. Nanda, D. K. Panda, and H. P. T. Nguyen, “Performance Analysis of Double Gate Junctionless TFET with respect to different high-k materials and oxide thickness,” 2nd International Conference on Artificial Intelligence and Signal Processing (AISP), Vijayawada, India, February 12–14, 2022.
[C.49] Invited: R. T. Velpula, B. Jain, D. Das, T. R. Lenka, and H. P. T. Nguyen, “Advantages of Polarization Engineered Quantum Barriers in III-Nitride Ultraviolet Light-Emitting Diodes: An Electron-Blocking Layer Free Approach,” 2nd IEEE International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, January 29, 2022.
[C.48] S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Performance Enhancement of …”
[C.47] H. P. T. Nguyen, R. T. Velpula, and B. Jain, “Molecular Beam Epitaxial Growth of High Efficiency AlInN Nanowire Ultraviolet Light-Emitting Diodes,” SPIE Optics and Photonics Conference, San Diego, California, August 1–5, 2021.
[C.46] Invited: H. P. T. Nguyen, “High Efficiency AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” IEEE 2021 Latin American Electron Devices Conference (Virtual), April 19–21, 2021.
[C.45] R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “Phosphor-Free InGaN/AlGaN Nanowire Red Micro-Light-Emitting Diodes for Display Applications,” SPIE Photonics West, Digital Forum, March 6–11, 2021.
[C.44] B. Jain, R. T. Velpula, H. Q. T. Bui, and H. P. T. Nguyen, “Controlling Electron Overflow in InGaN/GaN Nanowire White Light-Emitting Diodes Without Electron Blocking Layer,” SPIE Photonics West, March 6–11, 2021.
[C.43] Keynote: H. P. T. Nguyen, “Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes: Challenges, Approaches, and Opportunities,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, Silchar, India, January 30–31, 2021.
[C.42] Invited: R. T. Velpula, B. Jain, T. R. Lenka, and H. P. T. Nguyen, “InGaN/GaN Nanowire White Color Light-Emitting Diodes without Electron Blocking Layer,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, Silchar, India, January 30–31, 2021.
[C.41] Invited: H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes on Si and Patterned Substrates for Display/AR/VR Applications,” OSRAM Opto Semiconductors, August 13, 2020.
[C.40] Invited: H. P. T. Nguyen, “III-Nitride based Nanowire LEDs for micro-display applications,” Google LLC, June 14, 2020.
[C.39] Invited: H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes on Si and Patterned Substrates,” King Abdullah University of Science and Technology, co-hosted by the Western Saudi Arabia Chapter of IEEE Electron Device Society, May 29, 2020.
[C.38] Invited: H. P. T. Nguyen, “III-Nitride Nanostructures Grown by Molecular Beam Epitaxy: Materials, Device Fabrication, and Applications,” Mechanical and Industrial Engineering Department, NJIT, October 9, 2019.
[C.37] Invited: H. P. T. Nguyen, “Phosphor-Free Nanowire Light-Emitting Diode Arrays on Si and Patterned Substrates,” Vietnam National University – Ho Chi Minh City, Vietnam, August 20, 2019.
[C.36] Invited: H. P. T. Nguyen, “Full-Color and Phosphor-Free White Light-Emitting Diode Arrays on Si and Flexible Substrates,” Ton Duc Thang University, Vietnam, August 15, 2020.
[C.35] Invited: H. P. T. Nguyen, “Using Smart-LED in developing high quality and durable seedlings,” Vietnam Innovation Network, August 21–26, 2018, Ha Noi, Vietnam.
[C.34] M. Rajan Philip, T. H. Q. Bui, M. Djavid, Md. N. Bhuyian, P. Vu, and H. P. T. Nguyen, “Phosphor-free III-nitride nanowire white-light-emitting diodes for visible light communication,” SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, March 3–7, 2018, Denver, Colorado.
[C.33] M. Rajan Philip, D. D. Choudhary, M. Djavid, Md. N. Bhuyian, and H. P. T. Nguyen, “AlGaN/GaN Nanowire UV-B Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” 33rd North American Molecular Beam Epitaxy Conference, October 15–18, 2017, Galveston, Texas.
[C.32] Invited: H. P. T. Nguyen, “III-Nitride Nanowire Lighting Emitting Diodes on Flexible Platform,” The 2017 EITA Conference on New Materials, Nanotechnology and New Energy, July 01, 2017, University of Michigan, Ann Arbor, Michigan.
[C.31] Invited Plenary: H. P. T. Nguyen, S. Zhao, J. Piao, and Z. Mi, “III-Nitride Nanowire LEDs and Lasers: The Next Generation Lighting Technology,” 13th China International Forum on Solid State Lighting, November 15–17, 2016, Beijing, China.
[C.30] M. R. Philip, D. D. Choudhary, M. Djavid, M. N. Bhuyian, J. Piao, and H. P. T. Nguyen, “Controlling Color Emission of InGaN/AlGaN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” 32nd North American Molecular Beam Epitaxy Conference, Saratoga Springs, New York, September 18–21, 2016.
[C.29] Invited: H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” OSA Technical Group Webinar, July 27, 2016.
[C.28] Invited: H. P. T. Nguyen, “III-nitride Nanowire Light-Emitting Diodes,” Joint Workshop on LEDs for Life Science and Bio-Agriculture 2015, Ho Chi Minh City, Vietnam, November 10–11, 2015.
[C.27] Plenary: H. P. T. Nguyen, Y. Evo, “Phosphor-Free III-Nitride Nanowire White Light Emitting Diodes: Challenges and Prospects,” 227th Electrochemical Society Meeting, Chicago, Illinois, May 24–28, 2015.
[C.26] Invited: H. P. T. Nguyen, “Molecular Beam Epitaxial Growth of Large Area InGaN/GaN Nanowire Solar Cells on Silicon Substrates,” 1st Annual World Congress of Smart Materials, Busan, South Korea, March 23–25, 2015.
[C.25] H. P. T. Nguyen, M. Djavid, X. Liu, Q. Wang, and Z. Mi, “High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes,” SPIE Photonics West 2014, San Francisco, February 7–12, 2015.
[C.24] Invited: Zetian Mi, S. Zhao, H. P. T. Nguyen, B. Le, Q. Wang, and X. Liu, “High Performance III-Nitride Nanowire Light Emitting Diodes from the Deep Ultraviolet to the Near Infrared,” 10th International Symposium on Semiconductor Light Emitting Diodes, Kaohsiung, Taiwan, December 14–19, 2014.
[C.23] Invited: G. A. Botton, M. Bugnet, K. J. Dudeck, N. Gauquelin, H. Liu, S. Prabhudev, A. Scullion, S. Stambula, S. Y. Woo, G.-Z. Zhu, H. P. T. Nguyen, and Z. Mi, “Studying Tomorrow's Materials Today: Insights with Quantitative STEM, EELS,” 2014 Microscopy and Microanalysis, Hartford, Connecticut, August 3–7, 2014.
[C.22] H. P. T. Nguyen, R. Wang, A. T. Connie, I. Shih, and Z. Mi, “Color Tunable Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire Light-Emitting Diodes on Silicon,” 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14–16, 2014.
[C.21] Invited: Z. Mi, H. P. T. Nguyen, M. Djavid, S. Zhang, A. T. Connie, S. M. Sadaf, Q. Wang, S. Zhao, and I. Shih, “High Power Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire White Light Emitting Diodes on Si,” 225th Electrochemical Society Meeting, Orlando, Florida, May 11–15, 2014.
[C.20] Invited: Z. Mi, H. P. T. Nguyen, S. Zhang, A. T. Connie, Md. G. Kibria, Q. Wang, and I. Shih, “Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes,” SPIE Photonics West 2014, San Francisco, California, February 1–6, 2014.
[C.19] Invited: Z. Mi and H. P. T. Nguyen, “High-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes,” Materials and Symposium for Efficient Lighting Symposium at the 246th National Meeting of the American Chemical Society, Indianapolis, IN, September 8–13, 2013.
[C.18] Invited: Z. Mi, H. P. T. Nguyen, S. Zhao, Q. Wang, B. H. Le, and K. H. Li, “High performance III-nitride nanowire LEDs and lasers on Si,” The 16th Canadian Semiconductor Science and Technology Conference, Thunder Bay, ON, Canada, August 12–16, 2013.
[C.17] H. P. T. Nguyen, Q. Wang, and Z. Mi, “Phosphor-free InGaN/GaN dot-in-a-wire white light emitting diodes on Cu substrates,” 55th Electronic Materials Conference, South Bend, Indiana, June 26–28, 2013.
[C.16] Invited: Z. Mi, S. Zhao, H. P. T. Nguyen, Q. Wang, and M. Djavid, “Ultrahigh Efficiency In(Ga)N Nanowire LEDs and Lasers on a Si Platform,” 15th Photonics North Conference, Ottawa, Canada, June 03–05, 2013.
[C.15] H. P. T. Nguyen, M. Djavid, and Z. Mi, “Nonradiative Recombination Mechanism in Phosphor-Free GaN-Based Nanowire White Light Emitting Diodes and the Effect of Ammonium Sulfide Surface Passivation,” 223rd Electrochemical Society Meeting, Toronto, Ontario, Canada, May 12–16, 2013.
[C.14] H. P. T. Nguyen, H.-D. Nguyen, S. Mho, and J. J. Lee, “Implanted Nano-hole Arrays for the Enhanced Efficiency of III-V Based Solar Cells and Light Emitting Diodes,” 223rd Electrochemical Society Meeting, Toronto, Ontario, Canada, May 12–16, 2013.
[C.13] Invited: Z. Mi, H. P. T. Nguyen, S. Zhang, K. Cui, and M. Djavid, “Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultra-high efficiency phosphor-free white light emitting diodes,” SPIE Photonics West 2013, San Francisco, California, February 2–7, 2013.
[C.12] Invited: Z. Mi, H. P. T. Nguyen, S. Zhang, and M. Djavid, “Ultrahigh Efficiency Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes on Silicon,” IEEE Photonics Conference (IPC12), Burlingame, California, September 23–27, 2012.
[C.11] H. P. T. Nguyen, Y. Li, K. Cui, and Z. Mi, “AlGaN/GaN Nanowire Deep Ultraviolet Light Emitting Diodes Monolithically Grown on Si(111),” Photonics North 2012, Quebec, Canada, June 6–8, 2012.
[C.10] Invited: H. P. T. Nguyen, S. Zhang, K. Cui, S. Fathololoumi, and Z. Mi, “Study on the Quantum Efficiency Enhancement in InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy,” IEEE Photonics Conference (IPC11), Arlington, Virginia, October 9–13, 2011.
[C.9] Invited: Z. Mi, H. P. T. Nguyen, K. Cui, S. Zhang, and S. Fathololoumi, “Ultrahigh-Efficiency Phosphor-Free Nanowire White Light Emitting Diodes Monolithically Grown on Silicon,” Canadian Semiconductor Science and Technology Conference, Univ. of British Columbia, Vancouver, Canada, August 15–17, 2011.
[C.8] H. P. T. Nguyen, K. Cui, S. Fathololoumi, X. Han, S. Zhao, Z. Mi, Q. Li, G. Wang, K. Bevan, and H. Guo, “On the surface electron accumulation and Fermi-level pinning at InN nonpolar growth surfaces,” 9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10–15, 2011.
[C.7] H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, and Z. Mi, “High-Efficiency p-Doped InGaN/GaN Dot-in-a-Wire White Light Emitting Diodes Monolithically Grown on Si(111),” 9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10–15, 2011.
[C.6] H. P. T. Nguyen, K. Cui, S. Zhang, X. Han, and Z. Mi, “InGaN/GaN dot-in-a-wire nanoscale heterostructures and high-efficiency light emitting diodes on Si,” 5th International Conference on Nanophotonics, Shanghai, China, May 22–26, 2011.
[C.5] Invited: Z. Mi, H. P. T. Nguyen, K. Cui, Md. G. Kibria, and I. Shih, “Harvesting Solar Energy Using Group III-Nitride Nanowires,” Photovoltaics Canada – 2nd National Scientific Conference, Canada, May 16–18, 2011.
[C.4] H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, “High Efficiency InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy on Si(111) Substrate,” Conference on Lasers and Electro-Optics 2011, Baltimore Convention Center, Baltimore, Maryland, USA, May 1–6, 2011.
[C.3] H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, “Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN dot-in-a-wire light emitting diodes on Si(111),” 219th Electrochemical Society Meeting, Montreal, Canada, May 1–6, 2011.
[C.2] Invited: Z. Mi, H. P. T. Nguyen, S. Zhang, and K. Cui, “High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111),” IEEE Photonics Society Winter Topical Meeting 2011, Keystone, CO, January 10–12, 2011.
[C.1] Invited: Z. Mi, H. P. T. Nguyen, K. Cui, X. Han, S. Zhang, and Y.-L. Chang, “Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si,” SPIE/COS Photonics Asia, Beijing, China, October 18–20, 2010.
Research Featured in Magazines / Newspapers
Researchers Make Electron Blocking Layer-Free Nanowire LEDs, Compound Semiconductor, March 10, 2020.
First Axial AlInN UV Core-shell Nanowire LEDs On Silicon, Compound Semiconductor, August 17, 2020.
Zinc oxide-graphene solar cells could provide new opportunities, Brightsurf.com, May 25, 2018. link
Full-Color InGaN/AlGaN Nanowire LEDs for Solid-State Lighting and Display, LED Professional, March 2018, Issue 66, page 50.
Researchers Create Phosphor-Free LEDs that Emit Light Across the Visible Spectrum, Beneath the AVS Surface, May 1, 2017.
Novel nanowire structures lead to white-light and AC-operated LEDs, Nanowerk, October 15, 2015. link
A Breakthrough LED Technology Manipulates Atoms to Produce White Light Efficiently, Innovation at NJIT, February 26, 2015.
Understanding today the light sources of tomorrow, Lab Talk – Nanotechnology, February 7, 2013. link
Nanowire LEDs: study examines efficiency bottleneck, Lab Talk – Nanotechnology, June 28, 2012.
Dots deliver efficient, phosphor-free white lighting, Compound Semiconductor, May 17, 2012.
Different wavelengths from one material – a new freedom in LED design, Semiconductor Manufacturing & Design Community, January 3, 2012.
Toward third-generation solar cells, SPIE Newsroom – Nanotechnology, January 7, 2011. link
