[B.1] T. R. Lenka and H. P. T. Nguyen, “Nanoelectronics Devices and Applications,” Bentham, 2024.
[B.2] T. R. Lenka and H. P. T. Nguyen, “HEMT Technology and Applications,” Springer, 2022.
[B.3] H. P. T. Nguyen, “Nanostructured Light-Emitters,” MDPI, Switzerland, 2020.
Book Chapters
[BC.1] R. Singh, T. R. Lenka, H. P. T. Nguyen, “3D Simulation Study of Laterally Gated AlN/β-Ga₂O₃ HEMT Technology for RF and High-Power Nanoelectronics,” HEMT Technology and Applications, Springer, 2022.
[BC.2] J. Manta, G. P. Rao, T. R. Lenka, M. Choudhury, and H. P. T. Nguyen, “III-Nitride HEMTs for THz Applications,” Terahertz Devices, Circuits and Systems, 2022.
[BC.3] R. T. Velpula, B. Jain, S. Das, T. R. Lenka, and H. P. T. Nguyen, “Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron-Blocking Layer Free Approach,” Springer LNEE Series: Micro and Nanoelectronics Devices, Circuits and Systems — Select Proceedings of MNDCS 2022.
[BC.4] R. Singh, T. R. Lenka, H. P. T. Nguyen, “Evolution and Present State-of-Art Gallium Oxide HEMTs — The Key Takeaways,” HEMT Technology and Applications, Springer, 2022.
[BC.5] R. T. Velpula, B. Jain, D. Samadrita, T. R. Lenka, and H. P. T. Nguyen, “Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron Blocking Layer Free Approach,” Micro and Nanoelectronics Devices, Circuits and Systems, Springer, 2022.
[BC.6] R. Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “RF Performance of Ultra-wide Bandgap HEMTs,” Emerging Trends in Terahertz Solid State Physics and Devices, Springer, 2020.
[BC.7] R. Singh, T. R. Lenka, D. Panda, R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “Ga₂O₃ Based Heterostructure FETs (HFETs) for Microwave and Millimeter-Wave Applications,” Emerging Trends in Terahertz Engineering and System Technologies, Springer, 2020.
[BC.8] Q. Wang, H. P. T. Nguyen, S. Zhao, and Z. Mi, “Axial GaN nanowire-based light emitting diodes,” in Wide Band Gap Semiconductor Nanowires for Optical Devices, edited by V. Consonni and G. Feuillet, Hermes Science Publishing, published online August 8, 2014.
Patents
H. P. T. Nguyen, R. T. Velpula, and B. Jain, “Resistive Switching in a RRAM Device,” US Provisional Patent, Serial No. 63/410,293.
Z. Mi, S. Zhao, “Methods and devices for solid state nanowire devices,” US 2016/0027961 A1.
Z. Mi and K. Cui, “High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis,” US 2012/0205613.
Journal Papers
2023
R. T. Velpula, B. Jain, “Highly Uniform Ultralow Power Resistive Switching in SiNx/SiO₂ RRAM Devices,” IEEE Transactions on Electron Devices (Under Review).
T. R. Lenka, S. K. Tripathy, “Quantum Transport in InAlAs/InP based HEMTs by Solving Schrödinger and Poisson Equations” (Under Review).
X. Liu, R. T. Velpula, and Z. Mi, “On the Threshold Current of Electrically Pumped Mid and Deep Ultraviolet Laser Diodes,” Applied Physics Letters (Under Review).
S. Das, T. R. Lenka, S. Sadaf, R. T. Velpula, “Impact of Prestrained Graded InGaN/GaN Interlayer towards Enhanced Optical Characteristics of Multi-quantum Well LED based on Silicon Substrate.”
G. P. Rao, R. Singh, N. E. I. Boukortt, G. Crupi, “Design and Simulation of T-Gate AlN/β-Ga₂O₃ HEMT for DC, RF and High-Power Nanoelectronics Switching Applications.”
G. P. Rao, R. Singh, T. R. Lenka, N. E. Boukortt, “Simulation Modelling of III-Nitride/β-Ga₂O₃ Nano-HEMT for Microwave and Millimeter Wave Application” (In Press).
R. Paul, T. R. Lenka, F. A. Talukdar, N. E. I. Boukortt, “Investigation of Novel n-Doped a-Si/CZTSe Ultrathin-Film for Enhanced Performance,” IEEE Transactions on Electron Devices (In Press).
G. P. Rao, N. E. I. Boukortt, S. Md. Sadaf, “Investigation of Performance Enhancement of a Recessed Gate Field-Plated AlGaN/AlN/GaN Nano-HEMT on β-Ga₂O₃ Substrate with Variation of AlN Spacer Layer Thickness,” Journal of Materials Science: Materials in Electronics, 34 (2023) 1442.
G. P. Rao, N. E. I. Boukortt, 2023; e3138, pp. 1–15.
S. Das, F. A. Talukdar, and R. T. Velpula, Vol. 36, No. 1, March 2023, pp. 91–101.
G. P. Rao, R. Lenka, 293 (2023) 116498.
T. T. Doan, T. Q. Le, R. T. Velpula, M. B. S. Muthu, P. Deren, and H.-D. Nguyen, “Highly stable white light emission from III-nitride nanowire LEDs utilizing nanostructured alumina doped Mn⁴⁺ and Mg²⁺.”
S. Shrestha, R. T. Velpula, B. P. Pandey, M. B. S. Muthu, T. A. N. Nguyen, “Characteristics of leakage currents in InGaN/AlGaN nanowire based red micro-light-emitting diodes,” 62 (2023) 455.
S. Das, R. Lenka, F. A. Talukdar, R. T. Velpula, “Design and Analysis of Novel High-Performance III-Nitride MQW-based Nanowire White-LED using HfO₂/SiO₂ Encapsulation,” 55 (2023) 67.
G. Purnachandra Rao, Rajan Singh, Nour El. I. Boukortt, Sharif Md. Sadaf, vol. 52, pp. 1948–1957, 2023.
R. T. Velpula, B. Jain, “Low-power multilevel resistive switching in β-Ga₂O₃ based RRAM devices,” Nanotechnology, 34 (2023) 075201.
2022
G. P. Rao, R. Singh, T. R. Lenka, “Simulation modelling of III-nitride/β-Ga₂O₃ HEMT for emerging high-power nanoelectronics applications,” Journal of the Korean Physical Society, 81 (2022) 876.
P. K. Esubonteng, R. Rojas-Cessa, “STAR: A Carrier Sense Agnostic MAC Scheme for a Crowded NLoS-FSOC Optical LAN,” 14 (2022) 815.
D. K. Panda, R. Singh, V. Goyal, N. E. I. Boukortt, and H. P. T. Nguyen, “Analytical Modelling of Dielectric Modulated Negative Capacitance-MoS₂ FET for Next-Generation Label-Free Biosensor,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Wiley), 36 (2022) pp. 1–14.
(Invited) R. T. Velpula, M. Patel, B. Jain, and A. Marangon, “Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes Using Photonic Crystal Structures,” ECS Transactions, 109 (2022) 3.
(Invited) “Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices,” Light: Science & Applications (Nature), 11 (2022) 164.
R. T. Velpula, B. Jain, M. Patel, F. M. Shakiba, N. Q. Toan, H.-D. Nguyen, “High-efficiency InGaN blue LEDs with reduced positive sheet polarization,” 61 (2022) 4967.
R. Singh, T. R. Lenka, D. K. Panda, N. E. I. Boukortt, G. Crupi, “Analytical modeling of I–V characteristics using 2D Poisson equations in AlN/β-Ga₂O₃ HEMT,” 145 (2022) 106627.
S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, and G. Crupi, “Effects of Polarization-Induced Doping and Graded Composition in an Advanced Multiple Quantum Well InGaN/GaN UV-LED for Enhanced Light Technology,” 4 (2022) 015030.
V. Sivathanu, T. R. Lenka, V. Goyal, “Carrier transport mechanism in bottom gate thin-film transistor with SnO as active layer for CMOS displays,” 35 (2022) e2975.
D. H. Anh, N. Q. Toan, P. C. T. Tung, C. T. Son, and H.-D. Nguyen, “Fabrication of ultrathin alumina membranes utilizing waste aluminum cans,” 60 (2022) 84.
T. R. Lenka, R. Singh, S. K. Tripathy, V. Goyal, T. K. Nguyen, “2DEG characteristics of InAlAs/InP based HEMTs by solving Schrödinger and Poisson equations followed by device characteristics,” International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 35 (2022) e2941.
R. T. Velpula, B. Jain, R. Wang, T. R. Lenka, “Polarization-Engineered P-type Electron-Blocking Layer Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for the Enhanced Carrier Transport,” Journal of Electronic Materials, 55 (2022) 838.
2021
H. Q. T. Bui, D. H. Anh, D. T. Tuyet, R. T. Velpula, B. Jain, and H.-D. Nguyen, “Enhancing Efficiency of AlGaN Ultraviolet-B Light-Emitting Diodes with Graded AlGaN Hole Injection Layer,” Physica Status Solidi (a), 218 (2021) 2100003.
S. Rajan, T. R. Lenka, D. Panda, “Investigation of β-Ga₂O₃-based HEMTs using 2D Simulations for Low Noise Amplification and RF Applications,” 3 (2021) 035042.
T. H. Q. Vu, T. T. Doan, B. Jain, R. T. Velpula, T. C. T. Pham, and H.-D. Nguyen, “Improving Color Quality of Nanowire White Light-Emitting Diodes with Mn⁴⁺ Doped Fluoride Nanosheets,” 12 (2021) 965.
R. T. Velpula, B. Jain, T. R. Lenka, “Controlled Electron Leakage in Electron Blocking Layer Free InGaN/GaN Nanowire Light-Emitting Diodes,” 34 (2021) 393.
R. Singh, T. R. Lenka, “Analytical Study of Energy Band Parameters and Lattice Temperature on Conduction Band Offset in AlN/Ga₂O₃ HEMT,” 34 (2021) 323.
M. Patel, B. Jain, R. T. Velpula, “Effect of HfO₂ Passivation Layer on Light Extraction Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes,” 102 (2021) 35.
B. Jain, R. T. Velpula, M. Patel, “Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodes,” 60, 3088–3093 (2021).
B. Jain, R. T. Velpula, M. Patel, S. M. Sadaf, “Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers,” Micromachines, 12, 334 (2021).
B. Jain, R. T. Velpula, M. Patel, “High performance electron blocking layer free ultraviolet light-emitting diodes,” International Society for Optics and Photonics, 11680, 1168012, 2021.
R. Singh, D. Panda, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, Wiley International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 34 (2021) e2794 (ranked among the top 10 most downloaded papers).
2020
D. K. Panda, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, T. T. Pham, “Single and Double Gate based GaN MOS-HEMTs for Design of Low Noise Amplifier: A Comparative Study,” 14 (2020) 1018.
H. Q. T. Bui, R. T. Velpula, B. Jain, “III-Nitride Based Narrow Band Far-UVC LEDs for Airborne and Surface Disinfection,” 98 (2020) 83.
D. K. Panda, R. Singh, T. R. Lenka, T. T. Pham, R. T. Velpula, B. Jain, H. Q. T. Bui, “Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study,” IET Circuits, Devices & Systems, 14 (2021) 1018.
R. T. Velpula, B. Jain, S. Velpula, H.-D. Nguyen, “High Performance Electron Blocking Layer Free Deep Ultraviolet Light-Emitting Diodes Implementing a Strip-in-a-Barrier Structure,” 45 (2020) 5125.
R. Singh, T. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, “Investigation of Current Collapse and Recovery Time due to Deep Level Defect Traps in β-Ga₂O₃ HEMT,” Journal of Semiconductors, 41 (2020) 102802.
Editor’s Pick: H. Q. T. Bui, R. T. Velpula, B. Jain, M. R. Philip, H. D. Tong, T. R. Lenka, and H. P. T. Nguyen, “High Performance AlGaN Nanowire Ultraviolet Light-Emitting Diodes with Potassium Hydroxide and Ammonium Sulfide Surface Passivation,” Applied Optics, 59 (2020) 7352.
D. T. Tuyet, V. T. H. Quan, B. Bondzior, P. J. Deren, L. A. Tuyen, N. Q. Hung, and H.-D. Nguyen, “High red emission performance of porous structural K₂SiF₆:Mn⁴⁺ dots-in-nanosphere synthesized using soft templates,” 28 (2020) 26189.
B. Jain, R. T. Velpula, S. Velpula, H.-D. Nguyen, “Enhanced Hole Transport in AlGaN Deep Ultraviolet Light-Emitting Diodes Using Double-Side Step Graded Superlattice Electron Blocking Layer,” 27 (2020) 2564.
B. Jain, M. Tumuna, H. Q. T. Bui, J. Jude, T. T. Pham, T. V. Le, A. V. Hoang, R. Wang, “Enhancing the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with photonic crystal structures,” 28 (2020) 22909.
R. T. Velpula, B. Jain, H. Q. T. Bui, J. Jude, M. Tumuna, H.-D. Nguyen, T. R. Lenka, and H. P. T. Nguyen, “Improving carrier transport in AlGaN deep ultraviolet light-emitting diodes using a strip-in-a-barrier structure,” Applied Optics, 59 (2020) 5276.
R. T. Velpula, M. R. Philip, B. Jain, H.-D. Nguyen, R. Wang, “Epitaxial Growth and Characterization of AlInN Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum,” 10 (2020) 2547.
2019
Invited Review: R. T. Velpula, B. Jain, H. Q. T. Bui, and H. P. T. Nguyen, “Full-Color III-Nitride Nanowire Light-Emitting Diodes,” Journal of Advanced Engineering and Computation, 3 (2019) 551.
H. Q. T. Bui, R. T. Velpula, B. Jain, O. H. Aref, H.-D. Nguyen, T. R. Lenka, “Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays,” 10 (2019) 492.
P. T. Dang, K. Q. Le, Q. M. Ngo, and T. K. Nguyen, “Guided Mode Resonance Filter with Ultra Narrow Bandwidth over the Visible Frequencies for Label-Free Optical Sensor,” 3 (2019) 405.
M. Rajan Philip, R. Babu, “Enhanced Efficiency of Dye-Sensitized Solar Cells based on Polyol Synthesized Nickel-Zinc Oxide Composites,” 48 (2019) 252.
2018
T. T. Hoang, Q. M. Ngo, D. L. Vu, “Controlling Fano Resonances in Multilayer Dielectric Gratings Towards Optical Bistable Devices,” 8 (2018) 16404.
M. Rajan Philip, “Full-Color InGaN/AlGaN Nanowire LEDs for Solid-State Lighting and Display,” March 2018, Issue 66, page 50.
Khai Q. Le, S. K. Ho, N. H. T. Tran, Q. M. Ngo, (2018) 045106.
M. Rajan Philip, T. H. Q. Bui, M. Djavid, M. N. Bhuyian, and H. P. T. Nguyen, “Phosphor Free III-Nitride Nanowire White-Light Emitting Diodes for Visible Light Communication,” Proc. SPIE 10595, Active and Passive Smart Structures and Integrated Systems XII, 105953.
M. Rajan Philip, D. D. Choudhary, T. H. Q. Bui, M. Djavid, and H. P. T. Nguyen, “Molecular Beam Epitaxial Growth and Device Characterization of AlGaN UV-B Nanowire Light-Emitting Diodes,” 1 (2018) 3.
T. T. Hoang, Q. M. Ngo, D. L. Vu, K. Q. Le, T. K. Nguyen, and H. P. T. Nguyen, “Induced high-order resonance linewidth shrinking with multiple coupled resonators in silicon-organic hybrid slotted two-dimensional photonic crystals for reduced optical switching power in bistable devices,” 12 (2018) 016014.
M. Djavid, D. D. Choudhary, M. R. Philip, T. H. Q. Bui, O. Akinnouye, T. T. Pham, and H. P. T. Nguyen, “Effects of Optical Absorption in Deep Ultraviolet Nanowire Light-Emitting Diodes,” Photonics and Nanostructures — Fundamentals and Applications, 28 (2018) 106.
M. Djavid, M. H. T. Dastjerdi, M. R. Philip, D. D. Choudhary, T. T. Pham, A. Khreishah, and H. P. T. Nguyen, “Photonic Crystal Based Permutation Switch for Optical Networks,” Photonic Network Communications, 35 (2018) 90.
2017
M. R. Philip, D. D. Choudhary, M. Djavid, T. H. Q. Bui, H.-D. Pham, D. Misra, K. Q. Le, J. Piao, and H. P. T. Nguyen, “Fabrication of Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes on Metal Substrates for Flexible Photonics,” ACS Omega, 2 (2017) 5708.
M. Djavid, M. H. T. Dastjerdi, M. R. Philip, D. D. Choudhary, A. Khreishah, and H. P. T. Nguyen, “4-Port Reciprocal Optical Circulators Employing Photonic Crystals for Integrated Photonics Circuits,” Optik, 144 (2017) 586.
M. R. Philip, D. D. Choudhary, M. Djavid, K. Q. Le, and H. P. T. Nguyen, “High Efficiency Green/Yellow and Red InGaN/AlGaN Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” Journal of Science: Advanced Materials and Devices, 2 (2017) 150.
Editor’s Pick: M. R. Philip, D. D. Choudhary, M. Djavid, M. N. Bhuyian, J. Piao, D. Misra, T. T. Pham, and H. P. T. Nguyen, “Controlling Color Emission of InGaN/AlGaN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” Journal of Vacuum Science & Technology B, 35 (2017) 02B108 (Featured as Editor’s Pick and highlighted in Beneath the AVS Surface, May 1, 2017).
2016
H. P. T. Nguyen, S. Arafin, J. Piao, and T. V. Cuong, “Nanostructured Optoelectronics: Materials and Devices,” Journal of Nanomaterials, 2016 (2016) 2051908.
K. Q. Le, H. P. T. Nguyen, Q. M. Ngo, A. Canimoglu, N. Can, “Experimental and numerical optical characterization of Plasmonic Copper Nanoparticles Embedded in ZnO Fabricated by Ion Implantation and Annealing,” Journal of Alloys and Compounds, 669 (2016) 246.
R. Wang, Y. H. Ra, Y. Wu, S. Zhao, I. Shih, Z. Mi, “Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire,” SPIE OPTO, 97481S.
K. Q. Le, J. Bai, H. P. T. Nguyen, “Fano-induced spontaneous emission enhancement of molecule placed in a cluster of asymmetrically-arranged metallic nanoparticles,” Journal of Luminescence, 173 (2016) 199.
2015
S. Zhao, M. G. Kibria, and Z. Mi, “III-nitride nanowire Optoelectronics,” Progress in Quantum Electronics, 44 (2015) 14.
S. Sadaf, Y. Ra, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white-light emitting diodes.”
S. Woo, M. Bugnet, Z. Mi, A. G. Botton, “Atomic Ordering in InGaN alloys within Nanowire Heterostructures,” 15 (2015) 6413.
S. Woo, N. Gauquelin, Z. Mi, and G. A. Botton, “Interplay of Strain and Indium Incorporation in InGaN/GaN Dot-in-a-Wire Nanostructures by Scanning Transmission Electron Microscopy,” 24 (2015) 344002.
Invited: Y. Evo, “Phosphor-Free III-Nitride Nanowire White Light Emitting Diodes: Challenges and Prospects,” ECS Transactions, 66 (2015) 213.
H. P. T. Nguyen, M. Djavid, X. Liu, Q. Wang, and Z. Mi, “High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes,” Proc. SPIE 9383 (2015) 9383007.
G. Sun, R. Chen, Y. Ding, and Z. Mi, “InGaN/GaN dot-in-a-wire: Ultimate terahertz nanoemitters,” 9 (2015) 105.
H. P. T. Nguyen, M. Djavid, S. Woo, X. Liu, A. T. Connie, S. Sadaf, Q. Wang, G. Botton, I. Shih, and Z. Mi, “Engineering the Carrier Dynamics of InGaN Nanowire White Light-Emitting Diodes by Distributed p-AlGaN Electron Blocking Layers,” Nature Scientific Reports, 5 (2015) 7744.
K. H. Li, Q. Wang, S. Zhao, and Z. Mi, “Polarization-resolved electroluminescence study of InGaN/GaN dot-in-a-wire light-emitting diodes grown by molecular beam epitaxy,” doi: 10.1002/pssa.201431726.
2014
R. Wang, A. T. Connie, I. Shih, and Z. Mi, “Color-Tunable, Phosphor-Free InGaN Nanowire Light-Emitting Diode Arrays Monolithically Integrated on Silicon,” Optics Express, 22 (2014) A1768.
A. F. Jason, Z. Mi, R. Leonelli, L. Stafford, “Improvement of the emission properties from InGaN/GaN dot-in-a-wire nanostructures after treatment in the flowing afterglow of a microwave N₂ plasma,” 25 (2014) 435606.
Q. Wang, X. Liu, M. G. Kibria, S. Zhao, K. H. Li, Z. Mi, “P-type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy,” 6 (2014) 9970.
M. Djavid, S. Zhang, K. Cui, S. Fan, and Z. Mi, “Tunnel injection InGaN/GaN dot-in-a-wire white-light emitting diodes,” Semiconductor Science and Technology, 29 (2014) 085009.
S. Zhang, A. T. Connie, D. A. Laleyan, Q. Wang, J. Song, I. Shih, and Z. Mi, “On the carrier injection efficiency and thermal properties of InGaN/GaN axial nanowire light emitting diodes.”
M. G. Kibria, S. Zhao, F. A. Chowdhury, Q. Wang, M. L. Trudeau, H. Guo, and Z. Mi, “Ultrahigh efficiency spontaneous overall water splitting on p-type GaN nanowires,” Nature Communications, 5 (2014) 3825.
Z. Mi, S. Zhang, A. T. Connie, M. G. Kibria, Q. Wang, and I. Shih, “Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes,” SPIE Proceeding 9003 (2014) 900306.
A. T. Connie, S. M. Sadaf, I. Shih, and Z. Mi, “Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy,” 32 (2014) 02C113.
H. P. T. Nguyen, Q. Wang, and Z. Mi, “Phosphor-free InGaN/GaN dot-in-a-wire white light emitting diodes on Cu substrates,” Journal of Electronic Materials, 43 (2014) 868.
2013
Y. Kamali, B. R. Walsh, J. Mooney, C. Brosseau, R. Leonelli, Z. Mi, and P. Kambhampati, “Spectral and spatial contributions to white light generation from InGaN/GaN dot-in-a-wire nanostructures,” Journal of Applied Physics, 114 (2013) 164305.
H. P. T. Nguyen, S. Zhang, A. Connie, M. Kibria, Q. Wang, I. Shih, and Z. Mi, “Breaking the carrier injection bottleneck of phosphor-free nanowire white light emitting diodes,” Nano Letters, 13 (2013) 5437.
M. G. Kibria, K. Cui, S. Zhao, D. Liu, H. Guo, M. L. Trudeau, S. Paradis, H. Abou-Rachid, and Z. Mi, “One-step overall water splitting under visible light using multi-band InGaN/GaN nanowire heterostructures,” 7 (2013) 7886.
B. AlOtaibi, S. Zhao, M. G. Kibria, S. Fan, and Z. Mi, “Highly Stable Photoelectrochemical Water Splitting and Hydrogen Generation Using a Double-Band InGaN/GaN Core/Shell Nanowire Photoanode,” 13 (2013) 4356.
S. Zhang, Y. Li, S. Fathololoumi, Q. Wang, Z. Mi, Q. Li, and G. T. Wang, “On the efficiency droop of top-down etched InGaN/GaN nanorod light emitting diodes under optical pumping,” 3 (2013) 082103.
Q. Wang, A. Connie, M. G. Kibria, S. Zhao, S. Sadaf, and Z. Mi, “High efficiency, spectrally pure 340 nm ultraviolet emission from AlₓGa₁₋ₓN nanowire based light emitting diodes,” 24 (2013) 345201.
S. Zhao, M. G. Kibria, Q. Wang, and Z. Mi, “Growth of large-scale vertically aligned GaN nanowire heterostructures with high uniformity on SiOx by catalyst-free molecular beam epitaxy,” 5 (2013) 5283.
H. P. T. Nguyen, M. Djavid, and Z. Mi, “Nonradiative recombination mechanism in phosphor-free GaN-based nanowire white light emitting diodes and the effect of ammonium sulfide surface passivation,” ECS Transactions, 53 (2013) 93.
B. AlOtaibi, M. Harati, S. Fan, S. Zhao, M. G. Kibria, and Z. Mi, “High efficiency photoelectrochemical water splitting and hydrogen generation using GaN nanowire photoelectrode,” (2013) 175401.
Z. Mi, S. Zhang, K. Cui, and M. Djavid, “Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultra-high efficiency phosphor-free white light emitting diodes,” 8634 (2013) 86340B.
J. Titus, Z. Mi, and A. G. U. Perera, “Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy,” 102 (2013) 121901.
V. Cardin, L. I. Dion-Bertrand, P. Gregoire, M. Sakowicz, Z. Mi, C. Silva, and R. Leonelli, “Recombination dynamics in InGaN/GaN nanowire heterostructures on Si(111),” 24 (2013) 045702.
2012
A. Shih, S. Fathololoumi, S. Zhao, B. L. Huy, I. Shih, Z. Mi, “Negative differential resistance in GaN/AlN heterostructure nanowires.”
Q. Wang, K. Cui, and Z. Mi, “High efficiency ultraviolet emission from AlₓGa₁₋ₓN core-shell nanowire heterostructures grown on Si(111) by molecular beam epitaxy,” 101 (2012) 043115.
H. P. T. Nguyen, K. Cui, S. Zhang, M. Djavid, and Z. Mi, “Controlling electron overflow in phosphor-free InGaN/GaN nanowire white-light-emitting diodes,” Nano Letters, 12 (2012) 1317.
H. P. T. Nguyen, M. Djavid, K. Cui, and Z. Mi, “Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon,” Nanotechnology, 23 (2012) 194012.
H. P. T. Nguyen, S. Zhang, K. Cui, and Z. Mi, “High efficiency InGaN/GaN dot-in-a-wire red light emitting diodes,” IEEE Photonics Technology Letters, 24 (2012) 321.
2011
S. Fathololoumi, and Z. Mi, “Self-organized In(Ga)N nanowire heterostructures and optoelectronic device applications,” 2 (2011) 123.
H. P. T. Nguyen, K. Cui, S. Zhang, S. Fathololoumi, and Z. Mi, “Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon,” Nanotechnology, 22 (2011) 445202.
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, M. Couillard, G. A. Botton, and Z. Mi, “p-type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111),” Nano Letters, 11 (2011) 1919.
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, “Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN dot-in-a-wire white light emitting diodes on Si(111),” ECS Transactions, 35 (2011) 41.
H. P. T. Nguyen, Y.-L. Chang, I. Shih, and Z. Mi, “InN p-i-n nanowire solar cells on Si,” IEEE Journal of Selected Topics in Quantum Electronics: Nanowires, 17 (2011) 1062.
2010
Z. Mi, K. Cui, X. Han, S. Zhang, and Y.-L. Chang, “Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si,” 7847, 784702 (2010).
2009
H. P. T. Nguyen, K. H. Kim, H. Lim, and J. J. Lee, “Characteristics of high efficiency InGaP/InGaAs double junction solar cells grown on GaAs substrates,” AIP Conf. Proc., 1169 (2009) 149.
E. S. Choi, H. M. Doan, S. Kim, H. Lim, F. Rotermund, and J. J. Lee, “Cathode-luminescence study of photonic crystal green InₓGa₁₋ₓN/InyGa₁₋yN light emitting diodes,” 311 (2009) 863.
Conference Presentations
Show all conference presentations (2007–2023)
(Invited) “III-Nitride Nanostructures for High Efficiency Ultraviolet Light-Emitters,” IEEE Research and Applications of Photonics in Defense, Miramar Beach, Florida, USA, September 11–13, 2023.
(Invited) “Full-Color Micro Light-Emitting Diodes Using Group III-Nitride Nanowires,” 25th Photonics North Conference, Montreal, Quebec, Canada, June 12–15, 2023.
M. B. S. Muthu, R. T. Velpula, B. Jain, and H. P. T. Nguyen, “Investigation of Performance Improvements in AlGaN Deep Ultraviolet Light-Emitting Diodes using Lens-Shaped Quantum Barriers,” 25th Photonics North Conference, Montreal, Quebec, Canada, June 12–15, 2023.
G. Purnachandra Rao, “Performance Analysis of Gate Engineered III-Nitride/β-Ga₂O₃ Nano-HEMT for High-Power Nanoelectronics,” Monterey, California, USA, May 21–25, 2023.
R. Paul, S. Shukla, T. R. Lenka, F. A. Talukdar, Nour El. I. Boukortt, 7–8 April 2023, Kalyani, India.
(Invited) R. T. Velpula, B. Jain, M. Patel, and A. Marangon, “Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures,” SPIE Photonics West 2023, San Francisco, California, USA, 28 January – 2 February 2023.
R. T. Velpula, B. Jain, “Mitigating positive sheet polarization in high efficiency InGaN blue light-emitting diodes,” San Francisco, California, USA, 28 January – 2 February 2023.
B. Jain, R. T. Velpula, “Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes,” San Francisco, California, USA, 28 January – 2 February 2023.
S. Das, T. R. Lenka, Fazal A. Talukdar, Giovanni Crupi, “Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED,” 11–14 December 2022, Bangalore, India.
G. Purnachandra Rao, Nistha Baruah, T. R. Lenka, Rajan Singh, Sharif Md. Sadaf, 11–14 December 2022, Bangalore, India.
R. Singh, N. E. Boukortt, G. P. Rao, T. R. Lenka, “The Effect of Back-Barrier on the Performance Enhancement of III-Nitride/β-Ga₂O₃ Nano-HEMT,” 2nd IEEE Electron Device Kolkata Conference (EDKCON 2022), Kolkata, India, November 26–27, 2022.
H. P. T. Nguyen, R. T. Velpula, and B. Jain, “Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes using Photonic Crystal Structures,” 242nd Electrochemical Society Meeting, Atlanta, Georgia, October 9–13, 2022.
H. P. T. Nguyen, R. T. Velpula, and B. Jain, “InGaN/AlGaN Red-Emitting Nanowire LEDs for Monolithic Micro-LED Displays,” 242nd Electrochemical Society Meeting, Atlanta, Georgia, October 9–13, 2022.
G. Purnachandra Rao, T. R. Lenka, Nour El. I. Boukortt, and G. Crupi, 10–11 December 2022, Kolkata.
S. Das, T. R. Lenka, F. Talukdar, R. T. Velpula, and G. Crupi.
Distinguished Lecture: H. P. T. Nguyen, “III-nitride Nanowire Ultraviolet Light-Emitting Diodes,” IEEE EDS Summer School on Recent Trends in Micro/Nanoelectronic Devices, Virtual, August 20–24, 2022.
S. Das, T. R. Lenka, F. Talukdar, R. T. Velpula, and G. Crupi, “Simulation Modelling of High-Efficiency AlGaN/GaN Multi-Quantum Well UV-LED with Double-Sided Graded Staircase EBL for Enhanced Light Technology,” 17–19 July 2022.
R. T. Velpula, B. Jain, “Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” Compound Semiconductor Week, Ann Arbor, Michigan, June 01–03, 2022.
R. T. Velpula, B. Jain, F. M. Shakiba, “Advantages of Distributed p-Type Electron Blocking Layers in InGaN Blue Light-Emitting Diodes,” 242nd Electrochemical Society Meeting, Vancouver, Canada, May 29 – June 02, 2022.
H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes: Materials, Device Fabrication, and Applications,” IEEE EDS Nepal Chapter, March 23, 2022.
P. Raut, U. Nanda, D. K. Panda, and H. P. T. Nguyen, “Performance Analysis of Double Gate Junctionless TFET with respect to different high-k materials and oxide thickness,” 2nd International Conference on Artificial Intelligence and Signal Processing (AISP), Vijayawada, India, February 12–14, 2022.
Invited: R. T. Velpula, B. Jain, D. Das, T. R. Lenka, and H. P. T. Nguyen, “Advantages of Polarization Engineered Quantum Barriers in III-Nitride Ultraviolet Light-Emitting Diodes: An Electron-Blocking Layer Free Approach,” 2nd IEEE International Conference on Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS), 29 January 2022.
S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, “Performance Enhancement of AlInGaN Quantum Well based UV-LED,” 19–21 December 2021.
S. Das, T. R. Lenka, F. A. Talukdar, R. T. Velpula, B. Jain, H. P. T. Nguyen, and G. Crupi, “Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology,” 15th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS), 20–22 October 2021.
H. P. T. Nguyen, R. T. Velpula, and B. Jain, “Molecular Beam Epitaxial Growth of High Efficiency AlInN Nanowire Ultraviolet Light-Emitting Diodes,” SPIE Optics and Photonics Conference, San Diego, California, August 1–5, 2021.
H. P. T. Nguyen, “High Efficiency AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” IEEE 2021 Latin American Electron Devices Conference (Virtual), April 19–21, 2021.
R. T. Velpula, B. Jain, H. Q. T. Bui, “Phosphor-Free InGaN/AlGaN Nanowire Red Micro-Light-Emitting Diodes for Display Applications,” SPIE Photonics West, Digital Forum, March 6–11, 2021.
B. Jain, R. T. Velpula, H. Q. T. Bui, “Controlling Electron Overflow in InGaN/GaN Nanowire White Light-Emitting Diodes Without Electron Blocking Layer,” SPIE Photonics West, Digital Forum, March 6–11, 2021.
H. P. T. Nguyen, “Phosphor-Free III-Nitride Nanowire Light-Emitting Diodes: Challenges, Approaches, and Opportunities,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, Silchar, India, January 30–31, 2021.
R. T. Velpula, B. Jain, T. R. Lenka, and H. P. T. Nguyen, “InGaN/GaN Nanowire White Color Light-Emitting Diodes without Electron Blocking Layer,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, Silchar, India, January 30–31, 2021.
R. Singh, T. R. Lenka, S. A. Ahsaan, and H. P. T. Nguyen, “Analytical Study of Conduction Band Discontinuity supported 2DEG Density in AlN/Ga₂O₃ HEMT,” International Conference on Micro/Nanoelectronics Devices, Circuits and Systems, Silchar, India, January 30–31, 2021.
B. Jain, R. T. Velpula, H. Q. T. Bui, M. Patel, “Electron Blocking Layer Free Full-Color InGaN/GaN White Light-Emitting Diodes,” Honolulu, HI, October 4–9, 2020.
R. T. Velpula, B. Jain, H. Q. T. Bui, “Ultraviolet Light-Emitting Diodes using Aluminium Indium Nitride Nanowire Structures,” Honolulu, HI, October 4–9, 2020.
H. Q. T. Bui, R. T. Velpula, B. Jain, “III-Nitride Based Narrow Band Far-UVC LEDs for Airborne and Surface Disinfection,” ECS PRiME (Virtual), Honolulu, HI, October 4–9, 2020.
Invited: H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes on Si and Patterned Substrates for Display/AR/VR Applications,” OSRAM Opto Semiconductors, August 13, 2020.
Invited: H. P. T. Nguyen, “III-Nitride based Nanowire LEDs for micro-display applications,” Google LLC, June 14, 2020.
Invited: H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes on Si and Patterned Substrates,” King Abdullah University of Science and Technology, co-hosted by the Western Saudi Arabia Chapter of IEEE Electron Device Society, May 29, 2020.
R. T. Velpula, B. Jain, H. Q. T. Bui, “Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes,” 2020 CLEO Laser Science to Photonic Applications, San Jose, California (Virtual), May 11–15, 2020.
H. Q. T. Bui, B. Jain, R. T. Velpula, “Full-Color MicroLEDs for Display Technologies,” 2020 CLEO Laser Science to Photonic Applications, San Jose, California (Virtual), May 11–15, 2020.
B. Jain, R. T. Velpula, H. Q. T. Bui, “Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes,” 2020 CLEO Laser Science to Photonic Applications, San Jose, California (Virtual), May 11–15, 2020.
D. K. Panda, R. Singh, T. R. Lenka, R. T. Velpula, H. Q. T. Bui, “Modeling of DC and RF Characteristics of Single and Double Gate AlGaN/GaN MOS-HEMTs,” 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27–30, 2019.
D. K. Panda, R. Singh, T. R. Lenka, R. T. Velpula, H. Q. T. Bui, and H. P. T. Nguyen, “Modeling of AlGaN/GaN HEMT as Biosensor for Detection of Breast Cancer,” 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27–30, 2019.
R. Singh, T. R. Lenka, R. T. Velpula, H. Q. T. Bui, and H. P. T. Nguyen, “Investigation of E-Mode Beta-Gallium Oxide MOSFET for Emerging Nanoelectronics,” 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27–30, 2019.
R. T. Velpula, B. Jain, H. Q. T. Bui, O. H. Aref, T. R. Lenka, and H. P. T. Nguyen, “High Efficiency Ultraviolet Emission from Molecular Beam Epitaxial Growth of AlInN/GaN Nanowires,” 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27–30, 2019.
B. Jain, R. T. Velpula, H. Q. T. Bui, O. H. Aref, T. R. Lenka, and H. P. T. Nguyen, “Comparative Study of AlInN and AlGaN Nanowire Deep Ultraviolet Light-Emitting Diodes,” 14th IEEE Nanotechnology Materials and Devices Conference, Stockholm, Sweden, October 27–30, 2019.
Invited: “III-Nitride Nanostructures Grown by Molecular Beam Epitaxy: Materials, Device Fabrication, and Applications,” Mechanical and Industrial Engineering Department, NJIT, October 9, 2019.
Invited: “Phosphor-Free Nanowire Light-Emitting Diode Arrays on Si and Patterned Substrates,” Vietnam National University – Ho Chi Minh City, Vietnam, August 20, 2019.
Invited: “Full-Color and Phosphor-Free White Light-Emitting Diode Arrays on Si and Flexible Substrates,” Ton Duc Thang University, Vietnam, August 15, 2020.
H. P. T. Nguyen, “Using Smart-LED in developing high quality and durable seedlings,” Vietnam Innovation Network, August 21–26, 2018, Ha Noi, Vietnam.
M. Rajan Philip, T. H. Q. Bui, M. Djavid, Md. N. Bhuyian, P. Vu, “Phosphor-free III-nitride nanowire white-light-emitting diodes for visible light communication,” March 3–7, 2018, Denver, Colorado.
T. H. Q. Bui, M. Rajan Philip, M. Djavid, “Full-Color Phosphor-Free InGaN/AlGaN Nanowire Light-Emitting Diodes Grown By Molecular Beam Epitaxy,” November 3–5, 2017, Newark, New Jersey.
M. Rajan Philip, T. H. Q. Bui, M. Djavid, “Phosphor-free InGaN/AlGaN white-light-emitting diodes on flexible substrates,” November 3–5, 2017, Newark, New Jersey.
M. Rajan Philip, D. D. Choudhary, M. Djavid, Md. N. Bhuyian, “AlGaN/GaN — Grown by Molecular Beam Epitaxy,” October 15–18, 2017, Galveston.
H.-D. Nguyen, “III-Nitride Nanostructures for Applications in Green Energy,” September 27–30, 2017, Ha Noi, Vietnam.
Invited Plenary: H. P. T. Nguyen, S. Zhao, J. Piao, and Z. Mi, “III-Nitride Nanowire LEDs and Lasers: The Next Generation Lighting Technology,” 13th China International Forum on Solid State Lighting, November 15–17, 2016, Beijing, China.
M. R. Philip, D. D. Choudhary, M. Djavid, M. N. Bhuyian, J. Piao, “Controlling Color Emission of InGaN/AlGaN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy.”
S. Y. Woo, M. Kociak, H. P. T. Nguyen, Z. Mi, G. A. Botton, “Correlative Nanoscale Luminescence and Elemental Mapping in InGaN/(Al)GaN Dot-in-a-wire Heterostructures,” 16th European Microscopy Congress 2016, August 28 – September 2, 2016, Lyon, France.
H. P. T. Nguyen, M. R. Philip, D. D. Choudhary, M. Djavid, and J. Piao, “Photoelectrochemical hydrogen generation using multi-band III-nitride nanowire arrays,” Water Energy Nexus, 252nd American Chemical Society National Meeting and Exposition, Philadelphia, PA, August 21–25, 2016.
H. P. T. Nguyen, “III-Nitride Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy,” OSA Technical Group Webinar, July 27, 2016.
R. Wang, Y. Ra, S. Zhao, X. Liu, I. Shih, and Z. Mi, “Tunable, full-color nanowire light-emitting diode arrays monolithically integrated on Si and sapphire,” SPIE Photonics West 2015, San Francisco, CA, February 2016.
Sharif M. Sadaf, Yong-Ho Ra, Hieu P. Nguyen, and Zetian Mi, 2015 MRS Fall Meeting & Exhibit, Boston, Massachusetts, November 29 – December 4, 2015.
H. P. T. Nguyen, M. N. Bhuyian, A. Diop, Y. Evo, R. Rocha, and J. Piao, “Self-organized InGaN/AlGaN superlattice core-shell heterostructures for high power phosphor-free nanowire white light-emitting diodes,” 5th International Workshop on Nanotechnology and Application, Vung Tau, Vietnam, November 11–14, 2015.
H. P. T. Nguyen, “III-nitride Nanowire Light-Emitting Diodes,” Joint Workshop on LEDs for Life Science and Bio-Agriculture 2015, Ho Chi Minh City, Vietnam, November 10–11, 2015.
R. Wang, Y. Ra, S. Zhao, X. Liu, I. Shih, and Z. Mi, “Tunable, full-color nanowire light-emitting diode arrays on Si and sapphire,” International Conference on Nitride Semiconductors, Beijing, China, August 30 – September 4, 2015.
H. P. T. Nguyen, Y. Evo, “Phosphor-Free III-Nitride Nanowire White Light Emitting Diodes: Challenges and Prospects,” 227th Electrochemical Society Meeting, Chicago, Illinois, May 24–28, 2015.
Ruolin Chen, Guan Sun, Yujie J. Ding, Hieu Nguyen, and Zetian Mi, “Photoluminescence Upconversion Study of GaN Nanowires: Potential for Optical Refrigeration,” CLEO 2015.
S. Sadaf, Y.-H. Ra, J. Kang, M. Djavid, and Z. Mi, “InGaN/GaN tunnel junction dot-in-a-wire light-emitting diodes,” 2015 MRS Spring Meeting & Exhibit, San Francisco, California, April 6–10, 2015.
H. P. T. Nguyen, “Molecular Beam Epitaxial Growth of Large Area InGaN/GaN Nanowire Solar Cells on Silicon Substrates,” 1st Annual World Congress of Smart Materials, Busan, South Korea, March 23–25, 2015.
H. P. T. Nguyen, M. Djavid, X. Liu, Q. Wang, and Z. Mi, “High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes,” SPIE Photonics West 2014, San Francisco, California, February 7–12, 2015.
Zetian Mi, S. Zhao, H. P. T. Nguyen, B. Le, Q. Wang, and X. Liu, “High Performance III-Nitride Nanowire Light Emitting Diodes from the Deep Ultraviolet to the Near Infrared,” 10th International Symposium on Semiconductor Light Emitting Diodes, Kaohsiung, Taiwan, December 14–19, 2014.
R. Cheriton, S. Han, A. Trojnar, A. Connie, Z. Mi, J. J. Krich, K. Hinzer, “Electrical and Optical Characterization of Core-Shell InGaN/GaN Nanowire Solar Cells on Si(111),” EU PVSEC 2014, Amsterdam, Netherlands, September 22–26, 2014.
S. Y. Woo, N. Gauquelin, M. Kociak, Z. Mi, G. A. Botton, “Influence of Strain State on the Formation of Short-Period InGaN/GaN Nanowire Superlattice by Electron Energy-Loss Spectroscopy,” 18th International Microscopy Congress, Prague, Czech Republic, September 7–12, 2014.
S. Y. Woo, M. Kociak, Z. Mi, G. A. Botton, “Nanoscale Luminescence Mapping of InGaN/GaN Multiple Quantum Dot Doped Nanowire LEDs with Scanning Transmission Electron Microscopy,” 18th International Microscopy Congress, Prague, Czech Republic, September 7–12, 2014.
G. A. Botton, M. Bugnet, K. J. Dudeck, N. Gauquelin, H. Liu, S. Prabhudev, A. Scullion, S. Stambula, S. Y. Woo, G.-Z. Zhu, H. P. T. Nguyen, Z. Mi, “Studying Tomorrow's Materials Today: Insights with Quantitative STEM, EELS,” 2014 Microscopy and Microanalysis, Hartford, Connecticut, August 3–7, 2014.
B. AlOtaibi, S. Fan, S. Zhao, M. G. Kibria, and Z. Mi, “Photoelectrochemical Water Splitting and Hydrogen Generation Using InGaN/GaN Nanowire Arrays,” 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14–16, 2014.
M. G. Kibria, F. A. Chowdhury, S. Zhao, Z. Mi, “Overall Water Splitting under Broadband Light Using InGaN/GaN Nanowire Heterostructures,” 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14–16, 2014.
S. Zhao, and Z. Mi, 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14–16, 2014.
H. P. T. Nguyen, R. Wang, A. T. Connie, I. Shih, and Z. Mi, “Color Tunable Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire Light-Emitting Diodes on Silicon,” 2014 IEEE Summer Topical Meeting Series, Montreal, Quebec, Canada, July 14–16, 2014.
A. T. Connie, I. Shih, and Z. Mi, “Investigating the Surface State Effect on Nanowire Solar Cell,” Next Generation Solar, Montreal, Quebec, May 14–16, 2014.
Z. Mi, H. P. T. Nguyen, M. Djavid, S. Zhang, A. T. Connie, S. M. Sadaf, Q. Wang, S. Zhao, and I. Shih, “High Power Phosphor-Free InGaN/GaN/AlGaN Core-Shell Nanowire White Light Emitting Diodes on Si,” 225th Electrochemical Society Meeting, Orlando, Florida, May 11–15, 2014.
Z. Mi, H. P. T. Nguyen, S. Zhang, A. T. Connie, M. G. Kibria, Q. Wang, and I. Shih, “Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light emitting diodes,” SPIE Photonics West 2014, San Francisco, California, February 1–6, 2014.
H. P. T. Nguyen, M. G. Kibria, A. Connie, Q. Wang, I. Shih, and Z. Mi, “High-power Phosphor-free InGaN/GaN/AlGaN Dot-in-a-wire Core-shell White Light Emitting Diodes,” 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5–11, 2013.
A. T. Connie, S. M. Sadaf, I. Shih, and Z. Mi, “Engineering the Color Rendering Index of Phosphor-free InGaN/(Al)GaN Nanowire White Light Emitting Diodes Grown by Molecular Beam Epitaxy,” 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5–11, 2013.
B. H. Le, N. H. Tran, and Z. Mi, “InGaN/GaN Dot-in-a-wire Intermediate-band Solar Cell Devices,” 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5–11, 2013.
M. G. Kibria, F. A. Chowdhury, S. Zhao, Q. Wang, and Z. Mi, “Band-engineered InGaN Nanowire Arrays for High Efficiency Water Splitting Under Visible Light Irradiation,” 30th North American Molecular Beam Epitaxy Conference, Banff, Alberta, October 5–11, 2013.
Z. Mi and H. P. T. Nguyen, “High-efficiency phosphor-free InGaN/GaN nanowire white light-emitting diodes,” Materials and Symposium for Efficient Lighting Symposium, 246th National Meeting of the American Chemical Society, Indianapolis, IN, September 8–13, 2013.
Z. Mi, H. P. T. Nguyen, S. Zhao, Q. Wang, B. H. Le, and K. H. Li, “High performance III-nitride nanowire LEDs and lasers on Si,” 16th Canadian Semiconductor Science and Technology Conference, Thunder Bay, ON, Canada, August 12–16, 2013.
B. H. Le, N. H. Tran, S. Arafin, and Z. Mi, “Current-voltage characteristics of single InGaN/GaN nanowire LEDs,” Washington, DC, August 25–30, 2013.
H. P. T. Nguyen, Q. Wang, and Z. Mi, “Phosphor-free InGaN/GaN dot-in-a-wire white light emitting diodes on Cu substrates,” 55th Electronic Materials Conference, South Bend, Indiana, June 26–28, 2013.
S. M. Sadaf, A. Connie, and Z. Mi, “Polarization doped core-shell InGaN-GaN dot-in-a-wire white light emitting diodes,” Indiana, June 26, 2013.
Z. Mi, S. Zhao, H. P. T. Nguyen, Q. Wang, and M. Djavid, “Ultrahigh Efficiency In(Ga)N Nanowire LEDs and Lasers on a Si Platform,” 15th Photonics North Conference, Ottawa, Canada, June 03–05, 2013.
H. P. T. Nguyen, M. Djavid, and Z. Mi, “Nonradiative Recombination Mechanism in Phosphor-Free GaN-Based Nanowire White Light Emitting Diodes and the Effect of Ammonium Sulfide Surface Passivation,” 223rd Electrochemical Society Meeting, Toronto, Ontario, Canada, May 12–16, 2013.
H. P. T. Nguyen, H.-D. Nguyen, S. Mho, and J. J. Lee, “Implanted Nano-hole Arrays for the Enhanced Efficiency of III-V Based Solar Cells and Light Emitting Diodes,” 223rd Electrochemical Society Meeting, Toronto, Ontario, Canada, May 12–16, 2013.
Z. Mi, H. P. T. Nguyen, S. Zhang, K. Cui, and M. Djavid, “Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultra-high efficiency phosphor-free white light emitting diodes,” SPIE Photonics West 2013, San Francisco, California, February 2–7, 2013.
M. Harati, B. M. Alotaibi, M. G. Kibria, S. Fan, S. Zhao, and Z. Mi, “n-InGaN Nanowire Arrays for Photoelectrochemical Hydrogen Generation,” Materials Research Society Fall 2012, Hynes Convention Center, Boston, MA, November 25–30, 2012.
S. Y. Woo, S. Turner, N. Gauquelin, Z. Mi, G. A. Botton, “Effect of Strain Distribution on Indium Incorporation in InGaN/GaN Dot-in-a-wire Nanostructures by Electron Energy-loss Spectroscopy,” Materials Research Society Fall 2012, Boston, MA, November 25–30, 2012.
M. G. Kibria, S. Zhao, and Z. Mi, “Photocatalytic Pure Water Splitting Under Visible Light Using InGaN/GaN Nanowire Heterostructures Grown By Molecular Beam Epitaxy,” Stone Mountain Park, Georgia, October 14–17, 2012.
Z. Mi, H. P. T. Nguyen, S. Zhang, and M. Djavid, “Ultrahigh Efficiency Phosphor-Free InGaN/GaN Nanowire White Light Emitting Diodes on Silicon,” IEEE Photonics Conference (IPC12), Burlingame, California, September 23–27, 2012.
B. AlOtaibi, M. Harati, M. G. Kibria, S. Fan, S. Zhao, and Z. Mi, “Photoelectrochemical Hydrogen Production Using GaN Nanowire Arrays,” Montreal, Quebec, Canada, June 6–8, 2012.
H. P. T. Nguyen, Y. Li, K. Cui, and Z. Mi, “AlGaN/GaN Nanowire Deep Ultraviolet Light Emitting Diodes Monolithically Grown on Si(111),” Photonics North 2012, Quebec, Canada, June 6–8, 2012.
M. Djavid, S. Zhang, K. Cui, and Z. Mi, “Reduced Electron Overflow in InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes by Using an Electronically Coupled Quantum Well,” Montreal, Quebec, Canada, June 6–8, 2012.
H. P. T. Nguyen, Y. Li, I. Shih, and Z. Mi, “InGaN/GaN Nanowires for Next Generation Photovoltaics,” Next Generation Solar 2012, Montreal, Quebec, Canada, May 14–15, 2012.
M. G. Kibria, Z. Mi, S. Zhao, D. Liu, K. H. Bevan, H. Guo, S. Paradis, A.-R. Hakima, and M. Trudeau, “Harnessing Energy from Sunlight and Water Using III-Nitride Nanowire Arrays,” Montreal, Quebec, Canada, May 14–15, 2012.
H. P. T. Nguyen, Y. Li, and Z. Mi, “Large Area InGaN/GaN Nanowire Solar Cells on Silicon,” CLEO 2012, San Jose, CA, May 6–11, 2012.
S. Fathololoumi, S. Zhao, M. Djavid, I. Shih, Z. Mi, “Large Area GaN/AlN Nanowire Resonant Tunneling Devices on Silicon,” CLEO 2012, San Jose, CA, May 6–11, 2012.
G. Sun, R. Chen, P. Zhao, Z. Mi, and Y. Ding, “Terahertz Generation in InGaN/GaN Dot-in-a-Wire,” CLEO 2012, San Jose, CA, May 2012.
H. D. Nguyen, J. J. Lee, and S. Mho, “Enhanced Efficiency in Single Junction GaAs Solar Cells by Nano-hole Arrays,” January 29–31, 2012.
H. P. T. Nguyen, K. Cui, S. Zhang, S. Fathololoumi, R. Wu, and Z. Mi, “High-efficiency phosphor-free InGaN/GaN dot-in-a-wire white-light-emitting diodes on Silicon,” SPIE Photonics West 2012, San Francisco, California, January 21–26, 2012.
H. P. T. Nguyen, S. Zhang, K. Cui, S. Fathololoumi, and Z. Mi, “Study on the Quantum Efficiency Enhancement in InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy,” IEEE Photonics Conference (IPC11), Arlington, Virginia, October 9–13, 2011.
Z. Mi, H. P. T. Nguyen, K. Cui, S. Zhang, and S. Fathololoumi, “Ultrahigh-Efficiency Phosphor-Free Nanowire White Light Emitting Diodes Monolithically Grown on Silicon,” Canadian Semiconductor Science and Technology Conference, Univ. of British Columbia, Vancouver, Canada, August 15–17, 2011.
H. P. T. Nguyen, S. Zhang, K. Cui, S. Fathololoumi, and Z. Mi, “High efficiency phosphor-free InGaN/GaN white light emitting diodes on Silicon,” 28th North American Molecular Beam Epitaxy Conference, La Jolla, CA, August 14–17, 2011.
H. P. T. Nguyen, K. Cui, S. Fathololoumi, X. Han, S. Zhao, Z. Mi, Q. Li, G. Wang, K. Bevan, and H. Guo, “On the surface electron accumulation and Fermi-level pinning at InN nonpolar growth surfaces,” 9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10–15, 2011.
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, S. Fathololoumi, and Z. Mi, “High-Efficiency p-Doped InGaN/GaN Dot-in-a-Wire White Light Emitting Diodes Monolithically Grown on Si(111),” 9th International Conference on Nitride Semiconductors, SECC, Glasgow, July 10–15, 2011.
H. P. T. Nguyen, K. Cui, S. Zhang, X. Han, and Z. Mi, “InGaN/GaN dot-in-a-wire nanoscale heterostructures and high-efficiency light emitting diodes on Si,” 5th International Conference on Nanophotonics, Shanghai, China, May 22–26, 2011.
Z. Mi, H. P. T. Nguyen, K. Cui, M. G. Kibria, D. Wang, and I. Shih, “Harvesting Solar Energy Using Group III-Nitride Nanowires,” Photovoltaics Canada — 2nd National Scientific Conference, Ottawa, Canada, May 16–18, 2011.
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, “High Efficiency InGaN/GaN Dot-in-a-Wire Light Emitting Diodes Grown by Molecular Beam Epitaxy on Si(111) Substrate,” CLEO 2011, Baltimore Convention Center, Baltimore, Maryland, USA, May 1–6, 2011.
H. P. T. Nguyen, S. Zhang, K. Cui, X. Han, and Z. Mi, “Molecular beam epitaxial growth, fabrication, and characterization of high efficiency InGaN/GaN dot-in-a-wire light emitting diodes on Si(111),” 219th Electrochemical Society Meeting, Montreal, Canada, May 1–6, 2011.
P. Bianucci, K. Cui, and Z. Mi, “Nanoscale infrared sources for spectroscopic analysis of water content in wood fibre networks,” Montreal, Quebec, Canada, February 2011.
Z. Mi, H. P. T. Nguyen, S. Zhang, and K. Cui, “High performance InGaN/GaN dot-in-a-wire light emitting diodes on Si(111),” IEEE Photonics Society Winter Topical Meeting 2011, Keystone, CO, January 10–12, 2011.
Z. Mi, H. P. T. Nguyen, K. Cui, X. Han, S. Zhang, and Y.-L. Chang, “Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si,” SPIE/COS Photonics Asia, Beijing, China, October 18–20, 2010.
Y. L. Chang, F. Li, J. Wang, Z. Mi, “Optical and Electrical Transport Properties of Nearly Intrinsic and Si-Doped InN Nanowires,” Notre Dame, Indiana, US, June 23–25, 2010.
H. P. T. Nguyen, S. Park, Y. L. Chang, J. L. Wang, I. Shih, and Z. Mi, “Low Cost and High Performance In(Ga)N/CuInSe₂ Heterojunction Solar Cells,” Photonics North 2010 collocated with Photovoltaics Canada — 1st National Scientific Conference, Niagara Falls, ON, Canada, June 1–3, 2010.
Y. L. Chang, I. Shih, and Z. Mi, “Vertically aligned InN p-i-n nanowire solar cells on Si,” Niagara Falls, ON, Canada, June 1–3, 2010.
H. P. T. Nguyen, K. H. Kim, H. Lim, and J. J. Lee, “Conversion efficiency enhanced by lowering bandgap energy of bottom cell in InGaP/InGaAs double junction solar cells,” International Workshop on Nanotechnology and Application, Vung Tau, Vietnam, November 12–14, 2009.
H. P. T. Nguyen, K. H. Kim, H. Lim, and J. J. Lee, “Characteristics of high efficiency InGaP/InGaAs double junction solar cells grown on GaAs substrates,” International Workshop on Advanced Material for New and Renewable Energy, Jakarta, Indonesia, June 9–11, 2009.
H. P. T. Nguyen and J. J. Lee, “Enhancing solar cell conversion efficiency by roughening surface,” 3rd Workshop for MEMS/Nanophotonics-based Sensors and Biomedical Applications, Ajou University, Korea, February 16–17, 2009.
E. S. Choi, H. M. Doan, S. Kim, H. Lim, F. Rotermund, and J. J. Lee, “Cathode-luminescence study of photonic crystal green InₓGa₁₋ₓN/InyGa₁₋yN light emitting diodes,” Sendai, Japan, May 21–24, 2008.
H. P. T. Nguyen, H. M. Doan, and J. J. Lee, “High efficiency III-V solar cell,” 2nd Workshop for MEMS/Nanophotonics-based Sensors and Biomedical Applications, Yongin-Si, Korea, January 30–31, 2008.
E. S. Choi, H. M. Doan, S. Kim, F. Rotermund, H. Lim, and J. J. Lee, “Enhanced cathode luminescence in InₓGa₁₋ₓN/InyGa₁₋yN green light emitting diode structure using two-dimensional photonic crystal,” Vung Tau, Vietnam, November 15–17, 2007.
E. S. Choi, and J. J. Lee, “Enhanced cathode luminescence using a photonic crystal in InGaN/GaN green LED structure,” Suwon, Korea, February 1–2, 2007.
Research Featured in Magazines / Newspapers
Researchers Make Electron Blocking Layer-Free Nanowire LEDs, Compound Semiconductor, March 10, 2020.
First Axial AlInN UV Core-shell Nanowire LEDs On Silicon, Compound Semiconductor, August 17, 2020.
Zinc oxide-graphene solar cells could provide new opportunities, Brightsurf.com, May 25, 2018. link
Full-Color InGaN/AlGaN Nanowire LEDs for Solid-State Lighting and Display, LED Professional, March 2018, Issue 66, page 50.
Researchers Create Phosphor-Free LEDs that Emit Light Across the Visible Spectrum, Beneath the AVS Surface, May 1, 2017.
Novel nanowire structures lead to white-light and AC-operated LEDs, Nanowerk, October 15, 2015. link
A Breakthrough LED Technology Manipulates Atoms to Produce White Light Efficiently, Innovation at NJIT, February 26, 2015.
Understanding today the light sources of tomorrow, Lab Talk – Nanotechnology, February 7, 2013. link
Nanowire LEDs: study examines efficiency bottleneck, Lab Talk – Nanotechnology, June 28, 2012.
Dots deliver efficient, phosphor-free white lighting, Compound Semiconductor, May 17, 2012.
Different wavelengths from one material – a new freedom in LED design, Semiconductor Manufacturing & Design Community, January 3, 2012.
Toward third-generation solar cells, SPIE Newsroom – Nanotechnology, January 7, 2011. link
